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Multiscale Investigations on Si-integrable Ferroelectric Hafnia-Zirconia Systems: From Fundamental Understanding to Everyday Electronics

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A rhombohedral ferroelectric phase in epitaxially strained Hf0.5Zr0.5O2 thin films

Author(s): Yingfen Wei, Pavan Nukala, Mart Salverda, Sylvia Matzen, Hong Jian Zhao, Jamo Momand, Arnoud S. Everhardt, Guillaume Agnus, Graeme R. Blake, Philippe Lecoeur, Bart J. Kooi, Jorge Íñiguez, Brahim Dkhil, Beatriz Noheda
Published in: Nature Materials, Issue 17/12, 2018, Page(s) 1095-1100, ISSN 1476-1122
DOI: 10.1038/s41563-018-0196-0

Direct Epitaxial Growth of Polar (1 – x )HfO 2 –( x )ZrO 2 Ultrathin Films on Silicon

Author(s): Pavan Nukala, Jordi Antoja-Lleonart, Yingfen Wei, Lluis Yedra, Brahim Dkhil, Beatriz Noheda
Published in: ACS Applied Electronic Materials, 2019, ISSN 2637-6113
DOI: 10.1021/acsaelm.9b00585

Stabilization of phase-pure rhombohedral HfZr O 4 in pulsed laser deposited thin films

Author(s): Laura Bégon-Lours, Martijn Mulder, Pavan Nukala, Sytze de Graaf, Yorick A. Birkhölzer, Bart Kooi, Beatriz Noheda, Gertjan Koster, Guus Rijnders
Published in: Physical Review Materials, Issue 4/4, 2020, ISSN 2475-9953
DOI: 10.1103/physrevmaterials.4.043401

Magnetic Tunnel Junctions Based on Ferroelectric Hf 0.5 Zr 0.5 O 2

Author(s): Yingfen Wei, Sylvia Matzen, Thomas Maroutian, Guillaume Agnus, Mart Salverda, Pavan Nukala, Qihong Chen, Jianting Ye, Philippe Lecoeur, Beatriz Noheda
Published in: Physical Review Applied, Issue 12/3, 2019, ISSN 2331-7019
DOI: 10.1103/physrevapplied.12.031001

Guidelines for the stabilization of a polar rhombohedral phase in epitaxial Hf0.5Zr0.5O2 thin films

Author(s): Pavan Nukala, Yingfen Wei, , Vincent de Haas, Qikai Guo, Jordi Antoja-Lleonart, Beatriz Noheda
Published in: Ferroelectrics (to appear in December), 2020, ISSN 0015-0193

Structure and magnetic properties of epitaxial CaFe2O4 thin films

Author(s): Silvia Damerio, Pavan Nukala, Jean Juraszek, Pim Reith, Hans Hilgenkamp, Beatriz Noheda
Published in: npj Quantum Materials, Issue 5/1, 2020, ISSN 2397-4648
DOI: 10.1038/s41535-020-0236-2