In this project the encapsulation and contacting of graphene and MoS2 was investigated. Graphene is one monolayer of carbon arranged a two dimensional (2D) honeycomb lattice, which is very promising for several applications in the semiconductor technology. The remarkable performance of the first experimental graphene devices gave rise to a new era of atomically thin materials in solid-state electronics. After some years so-called 2D materials beyond graphene began to be studied, for example transition metal dichalcogenides (TMDCs) that are atomically thin semiconductors of the type MX2, where a transition metal atom (M = Mo, W, We and so on) is sandwiched between two chalcogen atoms (X = S, Se, Te and so on). The advantage of TMDs over graphene, which conducts electricity very well, is that they are true semiconductors, which makes them perfectly suited for electronics and optoelectronics applications. But one problem remains the same: a device fabrication that retains the properties of these materials and approaches values close to what is theoretically possible. Although significant research has been performed, we still lack the knowledge of how to build a device that works with 100% of possible performance. Especially the interfaces on top of 2D materials are critical for the overall device performance, and suitable deposition techniques for them need to be developed. This project had as objectives to study the oxide deposition by means of atomic layer deposition on top of graphene and MoS2 and to build different kinds of test devices to assess their performance. In addition, contacting 2D materials with ohmic contacts after their encapsulation was investigated.
