Project description
Research lays valuable foundation for future petahertz optoelectronics
In semiconductors, electrons can be excited by interacting with laser light. Recent advances have enabled measuring this fundamental mechanism on timescales below a femtosecond. Strong terawatt laser fields cause very high electron mobility in 2D and 3D semiconductors. In addition, they cause the semiconductor to emit the high harmonics of the generation beam. Controlling electron movement in space and time is a prerequisite for developing ultrafast optoelectronic devices that are much faster compared to state-of-the-art terahertz devices. It still remains unknown how to control electron dynamics at frequencies above terahertz. The EU-funded PETACom project plans to develop ultrafast optoelectronic devices that operate in the petahertz regime. The focus will be on examining how electrons react to petahertz fields using femtosecond infrared laser light.
Fields of science
Programme(s)
Funding Scheme
RIA - Research and Innovation actionCoordinator
75015 Paris 15
France
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Participants (8)
1121 Budapest
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80539 Muenchen
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87032 Limoges
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Legal entity other than a subcontractor which is affiliated or legally linked to a participant. The entity carries out work under the conditions laid down in the Grant Agreement, supplies goods or provides services for the action, but did not sign the Grant Agreement. A third party abides by the rules applicable to its related participant under the Grant Agreement with regard to eligibility of costs and control of expenditure.
75794 Paris
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91054 Erlangen
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87700 Aixe-sur-vienne
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82152 Planegg Martinsried
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The organization defined itself as SME (small and medium-sized enterprise) at the time the Grant Agreement was signed.
08860 Castelldefels
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