Research lays valuable foundation for future petahertz optoelectronics
In semiconductors, electrons can be excited by interacting with laser light. Recent advances have enabled measuring this fundamental mechanism on timescales below a femtosecond. Strong terawatt laser fields cause very high electron mobility in 2D and 3D semiconductors. In addition, they cause the semiconductor to emit the high harmonics of the generation beam. Controlling electron movement in space and time is a prerequisite for developing ultrafast optoelectronic devices that are much faster compared to state-of-the-art terahertz devices. It still remains unknown how to control electron dynamics at frequencies above terahertz. The EU-funded PETACom project plans to develop ultrafast optoelectronic devices that operate in the petahertz regime. The focus will be on examining how electrons react to petahertz fields using femtosecond infrared laser light.
Fields of science
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Funding SchemeRIA - Research and Innovation action