Objective The overall goal of FAB 2000 is to assess and demonstrate the economical feasibility of a dedicated ASIC minifab that is characterised as an extremely flexible, ultrashort cycle time manufacturing line producing state-of-the-art CMOS and BiCMOS products using 0.45 micron/O.35 micron process technologies. This particular project acting as phase I of this activity, will conduct a validation of the concept.The concept requirements will be defined and investigations will establish the strengths and weaknesses in Europe, and how gaps may be filled. This work is essential to investigate ways of reducing the dramatically rising entry costs in the manufacture of advanced semiconductor technology products. The particular aim is to define a technology for the production of cost effective small volume ASICs in ultra short cycle times, but the results are also appropriate for use in larger volume lines providing a scalable low cost migration towards new process generations. The work will include software simulation for single wafer lots and significant consideration of the methodology for integrated manufacture including automated process monitoring. Considerations will also include industry standards, open systems, mini-environments, cell control, advanced process control, smart sensors, human interfaces, and single wafer processing options. The final part of the project will produce specifications for the accepted minifab option, detailing the content of following phases. Fields of science natural sciencescomputer and information sciencessoftwareengineering and technologyelectrical engineering, electronic engineering, information engineeringelectronic engineeringsensorssmart sensorsnatural sciencesphysical scienceselectromagnetism and electronicssemiconductivity Programme(s) FP3-ESPRIT 3 - Specific research and technological development programme (EEC) in the field of information technologies, 1990-1994 Topic(s) Data not available Call for proposal Data not available Funding Scheme Data not available Coordinator EUROPEAN SILICON STRUCTURES SA Address Zone industrielle 13106 Rousset France See on map EU contribution € 0,00 Participants (6) Sort alphabetically Sort by EU Contribution Expand all Collapse all ECOLE POLYTECHNIQUE FEDERALE DE LAUSANNE Switzerland EU contribution € 0,00 Address Des fluides - departement de mecanique 1015 Lausanne See on map GEC Plessey Semiconductors plc United Kingdom EU contribution € 0,00 Address Cheney manor SN2 2QW Swindon See on map Grenoble Silicium Submicronique France EU contribution € 0,00 Address Centre d'étude de grenoble avenue des martyrs 38041 Grenoble See on map Integral Solutions Ltd (ISL) United Kingdom EU contribution € 0,00 Address 3 campbell court bramley RG25 5EG Basingstoke See on map SIEMENS AG Germany EU contribution € 0,00 Address Wittelsbacherplatz 80333 Muenchen See on map TEXAS INSTRUMENTS DEUTSCHLAND GMBH Germany EU contribution € 0,00 Address Haggertystraße 11805 85356 Freising See on map
