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Magnetism and the effects of Electric Field

Periodic Reporting for period 2 - MagnEFi (Magnetism and the effects of Electric Field)

Reporting period: 2021-10-01 to 2024-03-31

In this project, European experts have assembled to provide enhanced training and education to early stage researchers on the topic of electric field effects on nanoscale magnetic structures and to make a scientific impact in terms of the design and performance of multi-functional spintronics devices. Our research contributed to the development of a new generation of high performing and greener hardware for information technologies. The consortium provided a rich training environment where the PhD candidates studied at the cutting edge of science and technology, and were also exposed to commercial concerns and relationship to society’s need for ever more powerful information technologies with a reduced environmental footprint.
Despite the delays due to the Covid pandemic MagnEFi has adapted to deliver its training and scientific objectives. MagnEFi's entire on-line training program has been completed, together with additional training events proposed by the ESRs. The scientific activity also fulfilled its objectives. Spintronics materials were grown and characterised for all the three control schemes (light, gate, light). Magneto-ionic gating was successfully achieved in a variety of materials and device structures which allowed for the manipulation of key properties like magnetic anisotropy and magnetic domain wall velocity. The strain control of the magnetic response has shown positive results with different strain configurations, planar and vertical constant strain, as well as dynamic strain in the form of surface acoustic waves. Both theory and experiments were used to understand and test these novel schemes of control of magnetism in nanostructures. Within the light scheme great progress was made to optimise the energy efficiency of all optical switching and its integration into photonic circuits. We have also shown first steps towards integration of the light and gating schemes, which is of great interest for the design of novel multifunctional spintronics devices.

Over the four years of the MagnEFi project, significant work was done towards Communication and Dissemination with over 45 peer reviewed publications produced and more currently in the revision and submission stages. MagnEFi Pis and ESRs gave over 80 presentations and invited talks at national and international conferences and engaged in over 30 outreach activities targeting the general public. These activities were wide ranging covering social media, talks at high schools, interviews in local media and production of YouTube videos among others. The MagnEFi project not only advanced the field through scholarly contributions but also played a vital role in disseminating knowledge and engaging with the wider community, effectively bridging the gap between academic research and public awareness.
The magnetic properties of nanoscale magnetic structures with at least one dimension at the nanometre level, such as ultrathin magnetic metal films (2D), strips (1D) and islands (quasi-0D) are conventionally manipulated by magnetic fields and electric currents. Much is now known about the magnetization reversal of such structures driven by magnetic field- and current-induced torques, and how it may be exploited in magnetic data storage technology or magnetic field sensors. While nanomagnetic devices have the advantages of retaining memory in the off-state and being insensitive to radiation, making technology such as Magnetic Random Access Memories (MRAM) competitive in niche markets, the main obstacle to a more widespread implementation is the large power density, as well as just overall power, required for the magnetization reversal and the subsequent incompatibility with device architectures, and associated energy wastage. In order to create more efficient devices, researchers over the last few years have investigated the effect of E-fields on
nanomagnetic structures, with pioneering studies predicting that in combination with a low level of conventional stimulus (magnetic field or electric current), or even using E-fields alone, the reversal of magnetization may be achieved at low power. This has led to spintronic circuits containing magnetic materials modified by E-fields becoming competitive with contemporary electronic integrated circuits (ICs) in terms of their switching energy, and being better in terms of implementing complex logic functions with smaller numbers of elements. The key factor towards making technologies based on nanomagnetic structures competitive with CMOS and other approaches is thus to enhance and diversify the E-field control of magnetism.
In our project we have expanded the exploration of E-field control of magnetism in nanomagnetic structures by using three different schemes: strain, gating and light. We have advanced the field of E-field control of magnetism by showing magneto-ionic gating in a variety of materials and device structures which allowed for the manipulation of key properties like magnetic anisotropy and magnetic domain wall velocity. The strain control of the magnetic response has also shown positive results with different strain configurations, planar and vertical constant strain, as well as dynamic strain in the form of surface acoustic waves. Within the light scheme great progress was made to optimise the energy efficiency of all optical switching and its integration into photonic circuits. Both theory and experiments were used to understand and test these novel schemes of control of magnetism in nanostructures. In addition, fist steps have been taken to use this knowledge and technological development in applications, for example, in the design and packaging of magnetic sensors.
Within this exciting scientific framework, our project significantly enhanced the career prospects of its ESRs through a uniquely cross-linked and research-focused training programme. The intertwining of three scientific approaches to applying E-fields to nanomagnetic structures successfully produced young researchers with a breadth of expertise that will be vital to sustaining the research and development of electronics for GreenIT in the EU in the future.
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