Quantum Emitters for Telecommunication in the O-Band

Project Information

QuanTELCO

Grant agreement ID: 862721

DOI 10.3030/862721

Project closed

EC signature date 30 August 2019

Start date 1 October 2019

End date 30 September 2023

Funded under

• EXCELLENT SCIENCE - Future and Emerging Technologies (FET)

Total cost € 2 990 576,25

EU contribution € 2 990 576,25

Coordinated by

OESTERREICHISCHE AKADEMIE DER WISSENSCHAFTEN
Austria

Deliverables

Websites, patent fillings, videos etc. (3)

Project website

A webpage for the project with a project description H2020 ackowledgement and links to all partners will be hosted and maintained by UNIVIE

Social media accounts, student blog and introductory outreach video online

A student blog section will be added and an introductory video describing the project will be posted on the project website Social media eg Twitter will be linked to the website and used to divulge project news

Conference/summer-school

A conference with attached summerschool on quantum optics with crystalline spin centres will be organized by members of the General Assembly The program details of attendance a summary of insights and selected presentations by members of the consortium will be delivered

Documents, reports (12)

Comparison of electrical and magnetic driving for spin ensemble control

The performance of the two spin manipulation methods will be extracted from experimental results and a thorough theoretical description by HWU and BME The relative merits together with the expected performance in terms of state fidelity will be reported in the deliverable

High-purity SiC sample for ensemble and single-centre experiments, including isotopical engineering

LIU will create highpurity SiC layers grown on commercial substrates These samples will have different characteristics dopant density and layer thickness for ensemble and singlecentre experiments Isotopic engineering will be used to determine the effect of 29Si 30Si and 13C on the properties of the emitters such as inhomogeneous broadening of the optical transition and the on the ESR linewidth The deliverable will contain a description of the growth procedure and first characterization results

Identification and theoretical assessment of telecom-SPEs

Identification of potentially suitable singlephoton emitters will be ongoing up to M15 in a continuous literature research and by communication of unpublished experimental efforts by UNIVIE HWU and RGU Theoretical assessment of telecomSPEs will be carried out by BME and UKON who will ascertain the spinphoton interfacing properties relevant for quantum communication The report will contain a summary of the identified spin centres and their properties

Waveguide-enhanced spin-photon interface for an ensemble

Tight confinement of photons in a waveguide mode see D33 will be used to enhance the interaction of the photons with the optical transitions of the ensemble The deliverable will report on experimental observations of the propagation of light in a waveguide containing an ensemble of Oband emitters

Theoretical optimization of protocols for electrically-driven ensemble quantum memory

In this report we will describe the results of spectroscopy and theoretical results on Mo and V spin ensembles These results will enable us to define the optimal spinphoton interfacing parameters We will include an outline of the resulting protocols in the deliverable

Report on IP and outreach activities

The report will contain a summary of all secured intellectual property and pending items as well as the outreach activities undertaken by the consortium A list of publications presentations social media activity and efforts to divulge the work of QuanTELCO to the general public

Waveguide-based quantum memory

Building upon D21D24 a photonstorage protocol most likely based on electromagnetically induced transparency will be implemented in the waveguide device We will report on the effectiveness of this method including electron and nuclear spin manipulation

White paper on SiC photonics and Roadmap for SiC quantum devices

A White paper on SiC photonics will be written by the project partners. The results of this document will be condensed into a Roadmap for SiC quantum devices, with a particular focus on spin-photon interfaces. The white paper will be submitted for publication. The white paper and roadmap will be delivered.

SiC membrane: <5 μm thickness, < 1nm RMS roughness

Thin membranes with low roughness are required for integration with FabryProt and photonic crystal cavities We will describe the creation of such membranes including the intended path towards thinner and smoother layers for improved performance

Fabrication of resonant photonic structures with single SPE

Spinphoton interfaces based on FabryProt and photonic crystal cavities will be assessed and reported on

Assessment of nuclear spin manipulation

Optimal usage of the large nuclear spin manifold of the leading candidates V and Mo will require highly refined protocols and careful experimental optimization The deliverable will contain first results on nuclear spin initialization and manipulation

Single-mode waveguides, loss <7 dB/cm and electrical contacts

The delivered report will include measurements of the losses in waveguides for interaction with spin centre ensembles and results of the fabrication of contacts for spin manipulation

Open Research Data Pilot (1)

Data management plan

The DMP will be submitted and will include provisions for storage internal sharing and external access to project data and publications

Publications

Peer reviewed articles (39)

Deep levels related to the carbon antisite–vacancy pair in 4H-SiC

Author(s): Hiroki Nakane, Masashi Kato,Yutaro Ohkouchi, Xuan Thang Trinh, Ivan G. Ivanov, Takeshi Ohshima, Nguyen Tien Son
Published in: Journal of Applied Physics, 2021, ISSN 0003-6951
Publisher: American Institute of Physics
DOI: 10.1063/5.0059953

"Fluorescence spectrum and charge state control of divacancy qubits via illumination at elevated temperatures in <mml:math xmlns:mml=""http://www.w3.org/1998/Math/MathML""><mml:mrow><mml:mn>4</mml:mn><mml:mi>H</mml:mi></mml:mrow></mml:math> silicon carbide"

Author(s): A. Csóré; I. G. Ivanov; N. T. Son; A. Gali
Published in: Physical Review B, 2022, ISSN 2469-9969
Publisher: APS
DOI: 10.1103/physrevb.105.165108

Vibronic States and Their Effect on the Temperature and Strain Dependence of Silicon-Vacancy Qubits in 4 H - Si C

Author(s): Péter Udvarhelyi, Gergő Thiering, Naoya Morioka, Charles Babin, Florian Kaiser, Daniil Lukin, Takeshi Ohshima, Jawad Ul-Hassan, Nguyen Tien Son, Jelena Vučković, Jörg Wrachtrup, Adam Gali
Published in: Physical Review Applied, Issue 13/5, 2020, ISSN 2331-7019
Publisher: American Physical Society
DOI: 10.1103/physrevapplied.13.054017

Hyperfine Structure of Transition Metal Defects in SiC

Author(s): Benedikt Tissot; Guido Burkard
Published in: PHYSICAL REVIEW B, Issue 14, 2021, ISSN 1098-0121
Publisher: American Physical Society
DOI: 10.1103/physrevb.104.064102

Developing silicon carbide for quantum spintronics

Author(s): Nguyen T. Son, Christopher P. Anderson, Alexandre Bourassa, Kevin C. Miao, Charles Babin, Matthias Widmann, Matthias Niethammer, Jawad Ul Hassan, Naoya Morioka, Ivan G. Ivanov, Florian Kaiser, Joerg Wrachtrup, David D. Awschalom
Published in: Applied Physics Letters, Issue 116/19, 2020, Page(s) 190501, ISSN 0003-6951
Publisher: American Institute of Physics
DOI: 10.1063/5.0004454

Quantum guidelines for solid-state spin defects

Author(s): Gary Wolfowicz, F. Joseph Hermans, Christopher P. Anderson, Shun Kanai, Hosung Seo, Adam Gali, Giulia Galli & David D. Awschalom
Published in: Nature Reviews Materials, 2021, ISSN 2058-8437
Publisher: Nature
DOI: 10.1038/s41578-021-00306-y

Dipolar spin relaxation of divacancy qubits in silicon carbide

Author(s): Lindvall, Oscar Bulancea; Son, Nguyen Tien; Abrikosov, Igor A.; Ivády, Viktor
Published in: npj Computational Materials volume, Issue 8, 2021, ISSN 2057-3960
Publisher: Nature
DOI: 10.1038/s41524-021-00673-8

Charge state control of the silicon vacancy and divacancy in silicon carbide

Author(s): Nguyen T. Son, Ivan G. Ivanov
Published in: Journal of Applied Physics, 2021, ISSN 0003-6951
Publisher: American Institute of Physics
DOI: 10.1063/5.0052131

High finesse microcavities in the optical telecom O-band

Author(s): J. Fait; S. Putz; G. Wachter; J. Schalko; U. Schmid; M. Arndt; M. Trupke
Published in: Applied Physics Letters, Issue 14, 2021, ISSN 0003-6951
Publisher: American Institute of Physics
DOI: 10.1063/5.0066620

Room-temperature coherent control of implanted defect spins in silicon carbide

Author(s): Fei-Fei Yan, Ai-Lun Yi, Jun-Feng Wang, Qiang Li, Pei Yu, Jia-Xiang Zhang, Adam Gali, Ya Wang, Jin-Shi Xu, Xin Ou, Chuan-Feng Li, Guang-Can Guo
Published in: npj Quantum Information, Issue 6/1, 2020, ISSN 2056-6387
Publisher: Nature Publishing Group
DOI: 10.1038/s41534-020-0270-8

Material platforms for defect qubits and single-photon emitters

Author(s): Gang Zhang, Yuan Cheng, Juh-Pin Chou, and Adam Gali
Published in: AIP Publishing, 2020, ISSN 0003-6951
Publisher: American Institute of Physics
DOI: 10.1063/5.0006075

Extending qubit coherence by adaptive quantum environment learning

Author(s): Eleanor Scerri, Erik M Gauger, Cristian Bonato
Published in: New Journal of Physics, Issue 22/3, 2020, Page(s) 035002, ISSN 1367-2630
Publisher: Institute of Physics Publishing
DOI: 10.1088/1367-2630/ab7bf3

Modified divacancies in 4H-SiC

Author(s): N. T. Son, D. Shafizadeh, T. Ohshima, I. G. Ivanov
Published in: Journal of Applied Physics, 2022, ISSN 0003-6951
Publisher: American Institute of Physics
DOI: 10.1063/5.0099017

Optimization of Etching Processes for the Fabrication of Smooth Silicon Carbide Membranes for Applications in Quantum Technology

Author(s): Mahsa Mokhtarzadeh; Maria Carulla; Roksolana Kozak; Christian David
Published in: Micro and Nano Engineering, Issue 5, 2022, ISSN 2590-0072
Publisher: Elsevier
DOI: 10.1016/j.mne.2022.100155

Péter Udvarhelyi, Roland Nagy, Florian Kaiser, Sang-Yun Lee, Jörg Wrachtrup, and Adam Gali

Author(s): Péter Udvarhelyi, Roland Nagy, Florian Kaiser, Sang-Yun Lee, Jörg Wrachtrup, and Adam Gali
Published in: Physical Review Applied, 2019, ISSN 2331-7019
Publisher: APS
DOI: 10.1103/physrevapplied.11.044022

Scalable fabrication of hemispherical solid immersion lenses in silicon carbide through grayscale hard-mask lithography

Author(s): Christiaan Bekker, Muhammad Junaid Arshad, Pasquale Cilibrizzi, Charalampos Nikolatos, Peter Lomax, Graham S. Wood, Rebecca Cheung, Wolfgang Knolle, Neil Ross, Brian Gerardot, Cristian Bonato
Published in: AIP Publishing, 2023, ISSN 0003-6951
Publisher: American Institute of Physics
DOI: 10.1063/5.0144684

Spin-controlled generation of indistinguishable and distinguishable photons from silicon vacancy centres in silicon carbide

Author(s): Naoya Morioka, Charles Babin, Roland Nagy, Izel Gediz, Erik Hesselmeier, Di Liu, Matthew Joliffe, Matthias Niethammer, Durga Dasari, Vadim Vorobyov, Roman Kolesov, Rainer Stöhr, Jawad Ul-Hassan, Nguyen Tien Son, Takeshi Ohshima, Péter Udvarhelyi, Gergő Thiering, Adam Gali, Jörg Wrachtrup, Florian Kaiser
Published in: Nature Communications, Issue 11/1, 2020, ISSN 2041-1723
Publisher: Nature Publishing Group
DOI: 10.1038/s41467-020-16330-5

Narrow inhomogeneous distribution of spin-active emitters in silicon carbide

Author(s): Roland Nagy; Roland Nagy; Durga Bhaktavatsala Rao Dasari; Charles Babin; Di Liu; Vadim V. Vorobyov; Matthias Niethammer; Matthias Widmann; Tobias Linkewitz; Izel Gediz; Rainer Stöhr; Heiko B. Weber; Takeshi Ohshima; Misagh Ghezellou; Nguyen Tien Son; Jawad Ul-Hassan; Florian Kaiser; Jörg Wrachtrup
Published in: Journal of Applied Physics, Issue 29, 2021, ISSN 0003-6951
Publisher: American Institute of Physics
DOI: 10.48550/arxiv.2103.06101

Five-second coherence of a single spin with single-shot readout in silicon carbide

Author(s): Christopher P. Anderson; Elena O. Glen; Cyrus Zeledon; Alexandre Bourassa; Yu Jin; Yizhi Zhu; Christian Vorwerk; Alexander L. Crook; Hiroshi Abe; Jawad Ul-Hassan; Takeshi Ohshima; Nguyen T. Son; Giulia Galli; David D. Awschalom
Published in: Science Advances, 2022, ISSN 2375-2548
Publisher: Wiley-VCH Verlag
DOI: 10.1126/sciadv.abm5912

Entanglement and control of single nuclear spins in isotopically engineered silicon carbide

Author(s): Alexandre Bourassa, Christopher P. Anderson, Kevin C. Miao, Mykyta Onizhuk, He Ma, Alexander L. Crook, Hiroshi Abe, Jawad Ul-Hassan, Takeshi Ohshima, Nguyen T. Son, Giulia Galli, David D. Awschalom
Published in: Nature Materials, 2020, ISSN 1476-1122
Publisher: Nature Publishing Group
DOI: 10.1038/s41563-020-00802-6

Electromagnetically induced transparency in inhomogeneously broadened divacancy defect ensembles in SiC

Author(s): Olger V. Zwier; Tom Bosma; Carmem M. Gilardoni; Xu Yang; Alexander R. Onur; Takeshi Ohshima; Nguyen T. Son; Caspar H. van der Wal
Published in: Journal of Applied Physics, 131:094401. AMER INST PHYSICS, 2022, ISSN 0003-6951
Publisher: American Institute of Physics
DOI: 10.1063/5.0077112

Learning quantum systems

Author(s): Valentin Gebhart, Raffaele Santagati, Antonio Andrea Gentile, Erik M. Gauger, David Craig, Natalia Ares, Leonardo Banchi, Florian Marquardt, Luca Pezze', Cristian Bonato
Published in: Nature Reviews Physics, 2023, ISSN 2522-5820
Publisher: Nature Publisching Group
DOI: 10.48550/arxiv.2207.00298

Fabrication and nanophotonic waveguide integration of silicon carbide colour centres with preserved spin-optical coherence

Author(s): Charles Babin, Rainer Stöhr, Naoya Morioka, Tobias Linkewitz, Timo Steidl, Raphael Wörnle, Di Liu, Erik Hesselmeier, Vadim Vorobyov, Andrej Denisenko, Mario Hentschel, Christian Gobert, Patrick Berwian, Georgy V. Astakhov, Wolfgang Knolle, Sridhar Majety, Pranta Saha, Marina Radulaski, Nguyen Tien Son, Jawad Ul-Hassan, Florian Kaiser & Jörg Wrachtrup
Published in: Nature Materials, 2021, ISSN 1476-1122
Publisher: Nature Publishing Group

Ab initio determination of pseudospin for paramagnetic defects in SiC

Author(s): András Csóré; Adam Gali
Published in: Physical Review B, Issue 25, 2020, ISSN 2469-9969
Publisher: Physical Review B
DOI: 10.1103/physrevb.102.241201

Broadband single-mode planar waveguides in monolithic 4H-SiC

Author(s): Son Nguyen; Joop Hendriks; Misagh Ghezellou; Tom Bosma; Jawad Ul Hassan; Caspar Van der Wal
Published in: Journal of Applied Physics, 2022, ISSN 0003-6951
Publisher: American Institute of Physics
DOI: 10.1063/5.0077164

Spin Structure and Resonant Driving of Spin-1/2 Defects in SiC

Author(s): Tissot, Benedikt; Burkard, Guido
Published in: Physical Review B, Issue 1, 2021, ISSN 2469-9969
Publisher: APS
DOI: 10.1103/physrevb.103.064106

Silicon Carbide Photonics Bridging Quantum Technology

Author(s): Stefania Castelletto; Alberto Peruzzo; Cristian Bonato; Brett C. Johnson; Marina Radulaski; Haiyan Ou; Florian Kaiser; Joerg Wrachtrup
Published in: ACS Publications, Issue 32, 2021, ISSN 2330-4022
Publisher: American Chemical Society
DOI: 10.1021/acsphotonics.1c01775

Carbon cluster emitters in silicon carbide

Author(s): Pei Li, Péter Udvarhelyi, Song Li, Bing Huang, and Adam Gali
Published in: Physical Review B, 2023, ISSN 2469-9969
Publisher: APS
DOI: 10.48550/arxiv.2304.04197

Spin-Optical Dynamics and Quantum Efficiency of a Single V1 Center in Silicon Carbide

Author(s): Naoya Morioka; Di Liu; Öney O. Soykal; Izel Gediz; Charles Babin; Rainer Stöhr; Takeshi Ohshima; Nguyen Tien Son; Jawad Ul-Hassan; Florian Kaiser; Jörg Wrachtrup
Published in: Physical Review Applied, 2022, ISSN 2331-7019
Publisher: American Physical Society
DOI: 10.1103/physrevapplied.17.054005

Hyperfine-mediated transitions between electronic spin-1/2 levels of transition metal defects in SiC

Author(s): Carmem M. Gilardoni; Irina Ion; Freddie Hendriks; Michael Trupke; Caspar H. van der Wal
Published in: New Journal of Physics, 23:083010. IOP PUBLISHING LTD, Issue 1, 2021, ISSN 1367-2630
Publisher: Institute of Physics Publishing
DOI: 10.1088/1367-2630/ac1641

Spectrally reconfigurable quantum emitters enabled by optimized fast modulation

Author(s): Daniil M. Lukin, Alexander D. White, Rahul Trivedi, Melissa A. Guidry, Naoya Morioka, Charles Babin, Öney O. Soykal, Jawad Ul-Hassan, Nguyen Tien Son, Takeshi Ohshima, Praful K. Vasireddy, Mamdouh H. Nasr, Shuo Sun, Jean-Philippe W. MacLean, Constantin Dory, Emilio A. Nanni, Jörg Wrachtrup, Florian Kaiser, Jelena Vučković
Published in: npj Quantum Information, Issue 6/1, 2020, ISSN 2056-6387
Publisher: Nature Publishing Group
DOI: 10.1038/s41534-020-00310-0

Fabrication and nanophotonic waveguide integration of silicon carbide colour centres with preserved spin-optical coherence.

Author(s): Charles Babin; Rainer Stöhr; Naoya Morioka; Naoya Morioka; Tobias Linkewitz; Timo Steidl; Raphael Wörnle; Di Liu; Erik Hesselmeier; Vadim V. Vorobyov; Andrej Denisenko; Mario Hentschel; Christian Gobert; Patrick Berwian; G. V. Astakhov; Wolfgang Knolle; Sridhar Majety; Pranta Saha; Marina Radulaski; Nguyen Tien Son; Jawad Ul-Hassan; Florian Kaiser; Jörg Wrachtrup
Published in: Nature Materials, Issue 16, 2022, ISSN 1476-4660
Publisher: Springer Nature
DOI: 10.1038/s41563-021-01148-3

A Telecom O-Band Emitter in Diamond

Author(s): Sounak Mukherjee, Zi-Huai Zhang, Daniel G. Oblinsky, Mitchell O. de Vries, Brett C. Johnson, Brant C. Gibson, Edwin L. H. Mayes, Andrew M. Edmonds, Nicola Palmer, Matthew L. Markham, Ádám Gali, Gergő Thiering, Adam Dalis, Timothy Dumm, Gregory D. Scholes, Alastair Stacey, Philipp Reineck, and Nathalie P. de Leon*
Published in: ACS Publications, 2023, ISSN 0002-7863
Publisher: American Chemical Society
DOI: 10.1021/acs.nanolett.2c04608

Nuclear spin quantum memory in silicon carbide

Author(s): Benedikt Tissot; Michael Trupke; Philipp Koller; Thomas Astner; Guido Burkard
Published in: Physical Revew Research, 2022, ISSN 2643-1564
Publisher: American Physical Society
DOI: 10.1103/physrevresearch.4.033107

Towards identification of silicon vacancy-related electron paramagnetic resonance centers in 4 H-SiC

Author(s): A. Csóré, N. T. Son, and A. Gali
Published in: Physical Review B, 2021, ISSN 2469-9969
Publisher: APS
DOI: 10.1103/physrevb.104.035207

Spin-relaxation times exceeding seconds for color centers with strong spin–orbit coupling in SiC

Author(s): Carmem M Gilardoni, Tom Bosma, Danny van Hien, Freddie Hendriks, Björn Magnusson, Alexandre Ellison, Ivan G Ivanov, N T Son, Caspar H van der Wal
Published in: New Journal of Physics, Issue 22/10, 2020, Page(s) 103051, ISSN 1367-2630
Publisher: Institute of Physics Publishing
DOI: 10.1088/1367-2630/abbf23

Positively charged carbon vacancy defect as a near-infrared emitter in 4H-SiC

Author(s): Meysam Mohseni, Péter Udvarhelyi, Gergő Thiering, and Adam Gali
Published in: Physical Review Materials, 2023, ISSN 2475-9953
Publisher: APS
DOI: 10.1103/physrevmaterials.7.096202

Isotope-Purification-Induced Reduction of Spin-Relaxation and Spin-CoherenceTimes in Semiconductors

Author(s): Oscar Bulancea-Lindvall, Matthew T. Eiles, Nguyen Tien Son, Igor A. Abrikosov, and Viktor Ivády
Published in: Physical Review Applied, 2023, ISSN 2331-7019
Publisher: APS
DOI: 10.1103/physrevapplied.19.064046

Recent advances in the <i>ab initio</i> theory of solid-state defect qubits

Author(s): Adam Gali
Published in: Nanophotonics, Issue 1, 2023, ISSN 2192-8614
Publisher: De Gruyter
DOI: 10.1515/nanoph-2022-0723