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Tuning electronic properties in twisted 2D transition metal dichalcogenides heterostructures.

Project description

Revealing electronic properties in twisted 2D materials

Two-dimensional (2D) materials, which consist of a single layer of atoms, have attracted a great deal of attention since the isolation of graphene in 2004. The ability to assemble them in heterostructures via the Van der Waals interactions expands the range of the new physical phenomena that can be observed. In particular, when a sheet of 2D material is placed over another and slightly rotated, the twist can radically change the material's properties and lead to exotic physical behaviours. The EU-funded 2DTWISTMDs project will study twisted heterostructures of transition metal dichalcogenides, which have received little attention. Specifically, it will thoroughly investigate their electronic structure and reveal what interactions give rise to correlated electronic phases.

Objective

The emergence of graphene in 2004 gave rise to the isolation of a new myriad of 2D materials with many different properties. In addition, the stacking of different 2D layers, forming Van der Waals heterostructures, has shown the possibility to modify and expand the features of the final hybrid materials. An important ingredient for the final attributes of these heterostructures is the alignment of its constituents. As a consequence of the difference in lattice constant and the relative angle between the 2D layers, a moiré pattern arises. This moiré pattern can give rise to new physics not present in the original materials. This has already being proven in twisted graphene heterostructures, and its study is exploding in popularity these days.
On the other hand, twisted heterostructures of semiconducting TMDs have received less attention. This project aims to realise and understand new correlated electronic phases of matter in twisted heterostructures of atomically thin semiconductors. Specifically, the project aims to: (1) thoroughly characterize the electronic structure of twisted semiconductor heterostructures; (2) understand how correlated electronic phases arise from interactions in twisted semiconductor heterostructures; and (3) search for new electronic phases such as spin liquids and topological phases. These new electronic phases will radically alter the conductivity of the heterostructure, and are expected to be highly sensitive to the electron density in the moiré superlattice and hence can be tuned via electronic gates, creating novel low-energy switches. The heterostructures will be characterised using electronic measurements, and low temperature scanning probe microscopy and spectroscopy measurements. While this fellowship would allow the experienced researcher to learn new techniques and expand his knowledge and networks, the topic of this proposal is also in line with the goals of Horizon 2020, Graphene Flagship and Quantum Flagship EU programmes.

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Keywords

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Programme(s)

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Topic(s)

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Funding Scheme

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MSCA-IF - Marie Skłodowska-Curie Individual Fellowships (IF)

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Call for proposal

Procedure for inviting applicants to submit project proposals, with the aim of receiving EU funding.

(opens in new window) H2020-MSCA-IF-2019

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Coordinator

AALTO KORKEAKOULUSAATIO SR
Net EU contribution

Net EU financial contribution. The sum of money that the participant receives, deducted by the EU contribution to its linked third party. It considers the distribution of the EU financial contribution between direct beneficiaries of the project and other types of participants, like third-party participants.

€ 266 813,76
Address
OTAKAARI 1
02150 Espoo
Finland

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Region
Manner-Suomi Helsinki-Uusimaa Helsinki-Uusimaa
Activity type
Higher or Secondary Education Establishments
Links
Total cost

The total costs incurred by this organisation to participate in the project, including direct and indirect costs. This amount is a subset of the overall project budget.

€ 266 813,76

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