Objective As minimum feature sizes in VLSI processes are further reduced, and as already existing techniques are pursued close to their physical limit; at some time, they encounter impossibility of further extrapolation, and need some technological breakthroughs. This general trend is especially met in the evolution of elementary devices, N and P channel MOSFETs of CMOS technologies. The work to be carried out, includes application of process and device simulation for device optimisation, the fabrication and characterisation of test structures, and reliability studies.This project will need the development of a few process steps. It will mainly rely on advanced process steps developed in ADEQUAT, and will make use of them as much as possible. For process and device simulation, it will rely on tools developed within other projects (eg STORM), on commercially available ones, and on process and device modelling work carried out in ADEQUAT. The work on novel architectures to be evaluated includes: - Channel engineering of MOS transistors by low temperature epitaxy and implantation of low diffusivity dopants. The goal is to achieve high channel current with high punchthrough voltage, and reduced short channel effects. - Elevated source drain architecture by selective epitaxy to reduce constraints on ultra-shallow silicided junctions, and implantation of new dopants, allowing for a better control of lateral doping. - Gate materials with work function close to mid-gap of silicon, resulting in a simpler process architecture (same gate material for N and P channel transistors), and thin gate dielectrics with silicon oxide/silicon nitride multilayers leading to reduced tunnel currents for the same equivalent silicon oxide thickness. The final objective is to make a comparison between the various architectures at 0.18 micron feature sizes, and give recommendations for the most suitable device architecture, in accordance with future requirements of 0.18 micron CMOS products. These recommendations should be taken into account for the next phase, which should be devoted during years 1996 and 1997 to the execution of the applied research work aimed at the 0.18 micron CMOS generation. Fields of science natural scienceschemical sciencesinorganic chemistrymetalloids Programme(s) FP3-ESPRIT 3 - Specific research and technological development programme (EEC) in the field of information technologies, 1990-1994 Topic(s) Data not available Call for proposal Data not available Funding Scheme Data not available Coordinator Grenoble Silicium Submicronique Address Centre d'étude de grenoble avenue des martyrs 38041 Grenoble France See on map EU contribution No data Participants (6) Sort alphabetically Sort by EU Contribution Expand all Collapse all Fraunhofer-Gesellschaft zur Förderungder Angewandten Forschung e.V. Germany EU contribution € 0,00 Address Dillenburgerstrasse 14199 Berlin See on map Other funding No data Inter University Microelectronics Center Belgium EU contribution € 0,00 Address Kapeldreef 75 3001 Leuven See on map Other funding No data NEDERLANDSE PHILIPS BEDRIJVEN B.V. Netherlands EU contribution € 0,00 Address Prof. holstlaan, 480,000 5656 AA Eindhoven See on map Other funding No data SWISS FEDERAL INSTITUTE OF TECHNOLOGY Switzerland EU contribution € 0,00 Address Physics department 1015 Lausanne See on map Other funding No data Siemens AG Germany EU contribution € 0,00 Address Otto-hahn-ring 6 81739 München See on map Other funding No data UNIVERSITE DE PARIS-SUD XI France EU contribution € 0,00 Address Rue georges clemenceau 15 91405 Orsay See on map Other funding No data
