Objective The optimum precursors combination for the growth of ZnSe, ZnSSe and ZnMgSSe has been identified as Me2Zn(NEt3), t-Bu2Se, t-Bu2S and (MeCp)2Mg. By the use of a nitrogen plasmas, or the nitrogen-containing precursors Zn[N(SiMe3)2]2 and EtZnN(SiMe3)2, nitrogen has successfully been incorporated into ZnSe at the level of approx. 1E17 am{-3}. However, the layers did not show p-type conductivity due to compensation of the nitrogen by n-type impurities (chloride) or passivation by hydrogen. Lattice-matched ZnMgSSe was successfully grown as GaAs and quantum-size effects were observed. Optical and electron beam pumped blue green lasers at room temperature were also demonstrated.Semiconductors based on II-VI materials are of special interest in the field of optoelectronics : their very large bandgaps span the electromagnetic spectrum from the red to the blue, allowing great flexibility.ZnSe/GaAs heterostructures and multiple-quantum wells(MQW)based on ZnSSe/ZnSe are particularly suited for use in devices operating in the blue region of the visible spectrum. Thus, they are excellent candidates for fabricating blue-emitting lasers and LEDs for applications in high-density optical memories, display devices, medical diagnostics, and communications through salt-water and ice.Serious problems hinder the production of these devices: it has been almost impossible to control the type of conductivity exhibited by II-VI semiconductors. For example, ZnSe can be grown to exhibit n-type conductivity but not p-type; this is a serious drawback, as one needs both conductivity types to construct p.n.-diodes and electrically driven laser diodes.The consortium will study the mechanisms of ZnSe growth by MOVPE: fundamental understanding of the physical principles controlling the properties of MOVPE-grown material will be acquired. Also, systematic research towards obtaining device quality p-and n-type material will be conducted. This achievement will be a significant advance beyond the state-of-the art, as, thus far, only expensive, non production-oriented MBE technologies have been successfully employed for ZnSe based device fabrication.The quality of the grown material will be assessed by novel optical and electrical methods. Appropriate precursors for layer growth at low temperatures and for p-type doping, which are currently unavailable, will be researched and synthesised. Fields of science natural sciencesphysical scienceselectromagnetism and electronicsoptoelectronicsnatural sciencesphysical scienceselectromagnetism and electronicssemiconductivitynatural sciencesphysical sciencesopticslaser physics Programme(s) FP3-BRITE/EURAM 2 - Specific programme (EEC) of research and technological development in the field of industrial and materials technologies, 1990-1994 Topic(s) 1.4.4 - Optical materials Call for proposal Data not available Funding Scheme CSC - Cost-sharing contracts Coordinator Epichem Ltd Address Power road bromborough L62 3QF Wirral United Kingdom See on map EU contribution € 0,00 Participants (4) Sort alphabetically Sort by EU Contribution Expand all Collapse all QUEEN MARY AND WESTFIELD COLLEGE - UNIVERSITY OF LONDON United Kingdom EU contribution € 0,00 Address Mile end road EN1 4NS London See on map Rheinisch-Westfälische Technische Hochschule Aachen (RWTH) Germany EU contribution € 0,00 Address Sommerfeldstraße 24 52074 Aachen See on map UNIV AVEIRO Portugal EU contribution € 0,00 Address Campo universitario 3800 Aveiro See on map UNIV LIEGE Belgium EU contribution € 0,00 Address Institut de physique - sart tilman 4000 Liege See on map
