Objective Manufacture and property measurements of silicon/glass layer/silicon wafer bonding. Substantial reduction of the thickness of the sputtered Corning 7740 bond glass layer and a low anodic voltage have been obtained. The silicon/glass water anodic bonding is completed and well established. A very reliable shear test method was developed to determine the fracture resistance of the bonding zone. A Weibull analysis was used for describing quantitative the distribution of the bonding strengths and fracture characteristics. A fracture mechanics-based methodology has been proposed and calibrated numerically to predict the limiting conditions under which Si wafer-glass-Si wafer bonded systems widely used in microsensor applications will fail by interfacial debonding from either edge defects or microflows. Silicon/Polymer/Silicon bonding. The mechanical tests showed a very high tensile yield stress which is at least as high as that of Si/pyrex/Si bond. A relation has been proposed which gives the fracture strength of the bond (or critical energy release rate for interface failure) in terms of the thickness of the bond, the substrate elastic properties, the polymer yield strength, and a proportionality constant which is calibrated numerically. Thick polymers Thick layers can be structured to form flow channels in interconnecting levels in microfluidic systems. Polysiloxane has been chosen as base material, due to its excellent mechanical parameters, its chemical stability and its proven biocompatibility. The polymerisation parameters and the resulting mechanical parameters of the polymer can be adjusted to the desired application. The great advantage of this method is that the bonding is performed at room temperature and low contact pressure. Silicon/Metal/Silicon bonding An assembly process of chips or sensors on silicon substrates involving electrical connections and hermetic sealings has been developed. This wafer scale silicon-metal-silicon assembly is based on a flip-chip bonding technique using solder bumps. The process fabrication of the soldering bumps located on the chips was optimized. The assembly of the two wafers (one wafers containing the chips and one wafer containing the substrates) was realised by using a commercial flip-chip aligner bonder. Four technology demonstrators were produced.The objective of this project is to develop flexible process technologies for the assembly of microsensors susteùs p, a somocp,-wafer scale. Particular attention is give to packaging and bonding techniques. Maximum compatibility with IC processes is pursued. Design rules for reliability-based design optimization are developed. Major tasks are:(i) development of Si/glass layer/Si bonding (ii) development of Si/polymer/Si bonding (iii) assessment of bonding integrity (v) fabrication of demonstrators, testing the integrated system (vi) development of unified design methodology for microsystemsResults should provide a sound technological bse for high volume, low cost manufacturing of microsensors and microsystems. The resulting design guidelines are a prerequisite for future development of Application Specific Integrated Systems (ASIS). Fields of science natural scienceschemical sciencespolymer sciencesengineering and technologymaterials engineeringengineering and technologyelectrical engineering, electronic engineering, information engineeringelectronic engineeringsensorsnatural scienceschemical sciencesinorganic chemistrymetalloids Programme(s) FP3-BRITE/EURAM 2 - Specific programme (EEC) of research and technological development in the field of industrial and materials technologies, 1990-1994 Topic(s) 2.1.2 - Design methodologies for complex components Call for proposal Data not available Funding Scheme CSC - Cost-sharing contracts Coordinator Schlumberger Industries SA Address 50 avenue jean jaurès 92542 Montrouge France See on map EU contribution € 0,00 Participants (6) Sort alphabetically Sort by EU Contribution Expand all Collapse all CENTRE D'ELECTRONIQUE & MICROTECHNIQUE Switzerland EU contribution € 0,00 Address Maladiere 71 2007 Neuchatel See on map Commissariat à l'Energie Atomique (CEA) France EU contribution € 0,00 Address Centre d'études de saclay 91191 Gif-sur-yvette See on map Fraunhofer-Gesellschaft zur Förderung der Angewandten Forschung eV (FhG) Germany EU contribution € 0,00 Address Hansastraße 27d 80686 München See on map SIEMENS AG Germany EU contribution € 0,00 Address Siemensdamm 50 1000 Berlin See on map UNIV NEUCHATEL Switzerland EU contribution € 0,00 Address Rue a.-l. breguet 2 2000 Neuchatel See on map W S Atkins Consultants Ltd United Kingdom EU contribution € 0,00 Address Woodcote grove ashley road KT18 5BW Epsom See on map
