The objective of this project is to improve the quantitative submicron surface analysis of semiconductor material and of microelectronic circuits by using Resonant Ionization Mass Spectrometry (RIMS) to achieve a detection limit in the ppm range when analysing test circuits.
The RIMS technique involves the ion beam sputtering the surface under analysis followed by resonant laser photoionisation of the sputtered neutral and their subsequent analysis in a mass spectrometer.
The project consist of two stages:
I) the partners will increase the sensitivity of their instruments by optimising the ion detection optics using Si standards containing a known amount of dopant, uniformly distributed through the wafers. Depending on the element under investigation, an increase in sensitivity up to a factor of 10-100 is expected with respect to a conventional SIMS;
II) the optimised detection capability will be combined with the bombardment by highly focused ion beams, in order to provide submicron spatial resolution for surface analysis. A beam spot diameter of 100 nm is aimed at. The fundamental aspects involved in the use of Ga ions for primary bombardment will be investigated with respect to their influence on the quantification of the measurements. The applicability of RIMS to quantitative multilayer analysis will also be investigated.
Funding SchemeCSC - Cost-sharing contracts