Skip to main content

Gallium indium aluminium nitride for multicolour sources

Objective



This project (RAINBOW) targets two important, closely related and fast growing markets. Firstly, high brightness outdoor lighting as used in large outdoor displays, traffic signals, automobile lighting, etc... and secondly, the market of high density optical disk storage as used in multimedia environments. To attack these areas the consortium intends to develop the first complete European Al Ga In N materials base, culminating in the mass production technology of Ultra High Brightness Light Emitting Diodes (UHB LED) in various colours and in the fabrication of blue laser nitride. The present consortium, including major manufacturers of electronic components (U1), laser diodes (U2), growth reactors, (M1), starting chemicals (M2) together with experts in device design (R1), reactor design (R3), materials characterisation (R2) and nitride material process (R4) can put Europe beyond our Japanese and American competitors and request the commissions support to achieve this aim. Through R4 a collaborative will be created with LTR LAQUANI project, to our knowledge the only fundamental research project running. The final scope being the mass production of LED's and lasers, the following objectives will be achieved in the framework of this project:
1) Realization of optoelectronic device demonstrators including:UHB LED's prototype emitting in the range 400nm to 590nm with luminous intensity of 4cd
laser diode samples operating at a wavelength of around 400nm with CW output power (Pout) of 5mW at room temperature.
2) Development of device processing technology for Ga Al In N based alloys, applicable to both multicoloured UHB LED's and blue laser diodes.
3) Development of material fabrication process (MOVPE growth) for the Al Ga In N multilayer structures applicable to both multicoloured UHB LED's and blue laser diodes.
4) Development of optimum group III and nitrogen precursors to allow the epitaxial deposition of group III nitrides with reduced pre reaction and reduced V/III ratios (from the present 1000:1 to below 100:1).
Almost all the technological development of a UHB LED is identical to that required for a laser where a beam of stimulated emission is generated by the addition of two parallel reflecting faces. After completion of the proposed three years RTD project, it is expected that an additional six months will be required to optimize LED and laser prototypes. After that, six more months will be needed to introduce the multicoloured LED prototype to the market place. The marketing of the developed epitaxial process will begin three months after the completion of the project.

Funding Scheme

CSC - Cost-sharing contracts

Coordinator

Thomson-CSF
Address
Domaine De Corbeville
91404 Gometz La Ville
France

Participants (7)

AIXTRON Semiconductor Technologies GmbH
Germany
Address
15-17,Kackertstrasse
52072 Aachen
CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE
France
Address
Rue Bernard Gregory, Sophia Antipolis
06560 Valbonne
Epichem Ltd
United Kingdom
Address
Power Road Bromborough
L62 3QF Wirral
Friedrich-Alexander-Universität Erlangen Nürnberg
Germany
Address
Cauerstraùe
91058 Erlangen
NEDERLANDSE PHILIPS BEDRIJVEN BV
Netherlands
Address
4,Professor Holstlaan 4
5656 AA Eindhoven
UNIVERSITY OF AVEIRO
Portugal
Address
Campus Universitario De Santiago
3800 Aveiro/eixo
UNIVERSITY OF SURREY
United Kingdom
Address
Dept. Of Physics University Of Surrey
GU2 7XH Guildford