Objective
The overall industrial objective of the JESICA project is to pave the way to a commercial European source of higher quality SiC substrates. The project will also generate the know-how needed now and in the future to enable European industries to play a major role in the SiC related new markets.
To realise this objective the consortium includes the whole chain of activities needed to deliver demonstrators meeting identified market needs:
- high purity SiC powder;
software packages for SiC HTCVD and sublimation growth simulation;
- "micropipeless" SiC seed wafers: zero micropipe on 75% of the seed wafer surface;
- low resistivity and semi-insulating, 50 mm wide, 4H-SiC wafers, with pipe defect density less than 10 per cm;
- 7 5 mm diameter SiC wafer with 0 50 mm central monocrystal and monotype area;
- device demonstrators asserting the quality of the produced material: Fast Schottky Rectifiers and Microwave MESFET Transistors The main effort is devoted to SiC crystal growth, with a joint effort on both the conventional sublimation growth technique and the recently invented High Temperature Chemical Vapour Deposition technique. This core part of the programme is supported by a numerical simulation work of both growth techniques and by a workpackage on the synthesis and purification of SiC powder fitting with the needs of SiC sublimation crystal growth. Characterisation (structural, electrical and optical) of the produced material aims to create an extensive feed-back to the growth and provide the infrastructure and know-how needed for SiC material qualification. The device demonstrators will give the opportunity to develop production processes and testing environments optimised for the needs of a SiC technology. The JESICA consortium is vertically integrated, from the source materials to the final devices.
It comprises one SiC powder manufacturer, two semiconductor wafers manufacturers, two academic research groups which have an internationally recognised expertise in Silicon Carbide growth, two research organisations with an expertise in crystal growth, material qualification and device processing / testing, and two potential users, which have clearly identified target markets for a SiC technology.
This proposal follows a former Brite Euram proposal with the same acronym, deposited during Spring 1996. The Former JESICA 1 has been rated A 1 and was part of the top ten percent in its call. The programme was unfortunately cancelled, following the last minit departure of a major partner from the consortium. The new consortium integrates all but one of the members of the former consortium with additional members in the key activities: SiC starting material (powder), crystal growth, wafers preparation and a device manufacturer. We believe that the new consortium is even more complete and stronger than the former was, owing to the presence of groups working at every level of the complete manufacturing chain of SiC from simulation and basic materials up to final devices and applications of devices. It has received support outside the consortium from several major players in the areas of SiC identified present and future markets: power electronics, microwaves and RF, optoelectronics. BE97-5004
Fields of science (EuroSciVoc)
CORDIS classifies projects with EuroSciVoc, a multilingual taxonomy of fields of science, through a semi-automatic process based on NLP techniques. See: The European Science Vocabulary.
CORDIS classifies projects with EuroSciVoc, a multilingual taxonomy of fields of science, through a semi-automatic process based on NLP techniques. See: The European Science Vocabulary.
- engineering and technology materials engineering crystals
- natural sciences physical sciences electromagnetism and electronics optoelectronics
- natural sciences chemical sciences inorganic chemistry inorganic compounds
- natural sciences physical sciences electromagnetism and electronics semiconductivity
- natural sciences chemical sciences inorganic chemistry metalloids
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Coordinator
91404 ORSAY
France
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