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DEVELOPMENT OF THE SCIENTIFIC AND TECHNICAL BASIS FOR INTEGRATED AMORPHOUS SILICON MODULES (JOINT PROPOSAL BY MBB, SOLEMS, IMEC AND ASSOCIATED RESEARCH LABORATORIES)

Objective

THE PRESENT CONTRACT IS RELATED TO THE DEVELOPMENT OF INDUSTRIAL PRODUCTION OF AMORPHOUS SOLAR CELLS MADE BY SOLEMS IN FRANCE AND MBB IN GERMANY; IT FOCUSES ON BASIC ASPECTS RELEVANT FOR CNRS AND UNIVERSITY RESEARCH GROUPS THAT CONSTITUTE THE PIRSEM-CNRS "ARC SILICIUM AMORPHE".

THE PRESENT CONTRACT TAKES PLACE AS PART OF AN INDUSTRIAL AND SCIENTIFIC EFFORT OT ENHANCE THE PERFORMANCES OF AMORPHOUS SILICON BASED SOLAR CELLS. THE RESEARCH FOCUSES ON FONDAMENTAL ASPECTS IN THE FOLLOWING FIELDS:

A) DEPOSITION PROCESS STUDIES
1- THE CONCEPT OF P-I-N DIODE FABRICATION USING SEPARATE DISCHARGES IN A COMMON VACUUM VESSEL HAS BEEN EXTENSIVELY STUDIED IN THE ARCAM REACTOR. IT IS SHOWN THAT THE ONLY SIZEABLE CROSS-CONTAMINATION COMES FROM B2H6 THERMAL DECOMPOSITION ON THE HOT WALLS.
2- DEPOSITIONS FROM SI2H6 AND SIH4 GLOW DISCHARGE HAVE BEEN COMPARED IN DETAIL. IT IS SHOWN IN PARTICULAR THAT IN ORDER TO OBTAIN GOOD MATERIAL, THE MAXIMUM DEPOSITION RATE FROM SI2H6 IS ONLY 2 TO 3 TIMES FASTES THAN FROM SIH4.
3- DEPOSITION PROCESS BY MERCURY PHOTO SENSITISATION OF SIH4 HAS BEEN EXTENSIVELY INVESTIGATED.
4- USE OF B(CH3)3 AS AN ALTERNATIVE TO B2H6 HAS BEEN INVESTIGATED. IT IS SHOWN THAT B(CH3)3 IS ALSO THERMALY DECOMPOSED AT THE DEPOSITION TEMPERATURE.

B) TRANSPORT PROPERTIES IN P-I-N DIODES

1- TIME OF FLIGHT TECHNIQUE HAS BEEN USED TO CHARACTERIZE THE INTERFACE REGIONS OF P-I-N DIODES. THE ELECTRIC FIELD STRENGHT AND RECOMBINATION PROBABILITIES HAVE BEEN DEDUCED.
2- ELECTROREFLECTANCE PHENOMENON HAS BEEN STUDIED IN DETAILS, IN RELATION TO THE INTERNAL FIELD STRENGHT DETERMINATION IN P-I-N DIODES.
3- VARIABLE ENERGY ELECTRON BEAM INDUCED CURRENT IS USED TO PROBE THE INTERNAL FIELD AND THE RECOMBINATION PROBABILITY.
4- THE A-SI:H DENSITY OF STATES IN THE VICINITY OF THE INTERFACE HAS BEEN STUDIED BY SCLC METHOD ON THIN N-I-N DEVICES.

C) ELLIPSOMETRY AND KELVIN PROBE WERE USED FOR IN-SITU CHARACTERISATION OF TCO A-SIH INTERFACES.

Funding Scheme

CSC - Cost-sharing contracts

Coordinator

CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE
Address
Place Jussieu 4, Tour 33, Rdc
75252 Paris
France