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PHOTOVOLTAIC SILICAON PRODUCTION BY THERMAL PLASMA PROCESS

Objective



COCONSIDERING A 20% PER YEAR INCREASE OF PHOTOVOLTAIC MARKET, IN THE 6 TO 8 FUTURE YEARS THE SUPPLY OF SILICON REJECT FROM ELECTRONIC INDUSTRY WOULD NOT BE SUFFICIENT TO PROVIDE SOLAR GRADE MULTICRISTALLIN WAFER PRODUCTION: NEW PROCESSES HAVE TO BE DEVELOPED TO OBTAIN INGOTS FROM MG OR OBSOLETE RAW MATERIAL WITH COMPETITIVE COST.

PLASMA PURIFICATION TECHNIC HAS BEEN DEVELOPED IN COLLABORATION BETWEEN PHOTOWATT AND THE LABORATORY OF PLASMA CHEMICAL REACTORS WITH THE SUPPORT OF CEE AND FRENCH AGENCY OF "MAITRISE DE L'ENERGIE". PURIFICATION PROCESS CONSISTS IN MELTING LOCALLY AN IMPURE SILICON BAR BY THE WAY OF INDUCTIVE PLASMA WITH AR-H2O2 GAS MIXTURE. AFTER PLASMA TREATMENT, PHOSPHORUS HAS BEEN EXTRACTED FORM N TYPE EG SILICON (>0.5 CM); BY THIS WAY, IT WOULD BE POSSIBLE TO USE THIS N-TYPE EG REJECT MATERIAL. PURIFICATION FACTORS OF 10 E5 HAVE BEEN OBTAINED IN THE CASE OF MG SILICON PROVIDING GOOD ENOUGH SOLAR CELL CHARACTERISTICS WITH FLUORIDE SLAGS. EXPERIMENTS OBTAINED WITH AN INDUSTRIAL 40 KW POWER PLASMA PLANT HAVE DEMONSTRATED THE FEASABILITY OF MELTING 100 CM2 CROSS SECTION SILICON BLOCKS.

Funding Scheme

CSC - Cost-sharing contracts
Leaflet | Map data © OpenStreetMap contributors, Credit: EC-GISCO, © EuroGeographics for the administrative boundaries

Coordinator

Photowatt International SA
Address
33 Rue Saint-honoré Zone Industrielle Champ Fleuri
38300 Bourgoin-jallieu
France

Participants (1)

ENSCP
France