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Combined electron and hole transport in inas/gasb heterostructures

Objective



Antimonide based materials are technologically very important because of their potential in a vast number of infra red applications. The electrical transport in InAs/GaSb heterostructures is novel and interesting because both electrons and holes contribute to the conduction. The first part of the project concerns the study of a zero Quantum Hall state which occurs when a sample with almost equal electron and hole densities is subject to a large magnetic field at low temperatures. The application of hydrostatic pressure reduces the carrier densities so that occupation of only a few Landau levels occurs at a lower magnetic field. The second part is the proposed measurement of devices where lateral patterning has further confined the electrons and holes to one or even zero dimensions. This would use a newly developed anodisation process to grow an insulating oxide onto the GaSb capping layer.

Funding Scheme

RGI - Research grants (individual fellowships)

Coordinator

Centre National de la Recherche Scientifique (CNRS)
Address
156 Avenue De Rangueil
31077 Toulouse
France

Participants (1)

Not available
United Kingdom