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Novel methods of semiconductor characterisation using a high-resolution nuclear microprobe


The planned installation of a new high-resolution nuclear microprobe, supervised by myself, in the Physics Department at the University of Lisbon will give a state-of-the-art materials analysis facility with the following objectives: (i). The development and use of unique materials applications using two new analysis techniques which I have invented. These offer novel routes to overcoming many existing limitations for characterising the crystallographic and electrical properties of a wide range of semiconductor structures. In the fields of microelectronic device analysis, defect and dislocation imaging in semiconductors, and the analysis of strained layer structures, these new techniques overcome the following limitations:
? the limited analytical depth using Scanning and Transmission Electron Microscopy.
? the inability of X-ray Diffraction to give depth resolved strain information.
? the need to remove device surface layers prior to analysis of the underlying layers.
? the difficulty of locating which microelectronic device components are most susceptible to 'Soft Upsets' by cosmic radiation.
(ii). The transfer of expertise on microprobe operation, associated ion beam physics and materials characterisation from Oxford to Lisbon, and strengthening the collaborative links between our groups.

Funding Scheme

RGI - Research grants (individual fellowships)


Universidade de Lisboa
2,Avenida Professor Gama Pinto 2
1700 Lisboa

Participants (1)

Not available
United Kingdom