Study of deep levels in si and sic, created by irradiation and diffusion

Objective

Research objectives and content
The objectives of this project are to study the interaction between high dose irradiation-induced defects and the impurity-related defects in silicon power diodes. The impurities are entered via diffusion of gold and platinum. Irradiation will be done with alpha-particles and protons. Hereby special attention will be given to the annealing kinetics of the induced defects, due to its extreme relevancy during technological processing of the diode after the irradiation, and to the dose and flux dependence of the defects. It will be tried to find relationships between the parameters used in diode preparation. Another aim is to extend the work on the irradiation-induced defects to SiC (Silicon Carbide) devices. Training content (objective, benefit and expected impact)
The objective is to learn new methods (admittance spectroscopy, etc), to gain experience about SiC and irradiation -induced defects, and to profit from the scientific knowledge found at the KTH. The stay will allow me to strengthen my knowledge in this field with a lot of potential for the future.
Links with industry / industrial relevance (22)
Diffusion and irradiation help to reduce the reverse recovery time in silicon power diodes. The use of SiC would allow, due to its high breakdown electric field strength, to produce diodes a lot thinner than ordinary silicon diodes.

Fields of science

Programme(s)

FP4-TMR - Specific research and technological development programme in the field of the training and mobility of researchers, 1994-1998

Topic(s)

Call for proposal

Data not available

Funding Scheme

RGI - Research grants (individual fellowships)

Coordinator

Kungliga Tekniska Högskolan

Address

229,electrum 229
164 40 Stockholm kista
Sweden

EU contribution

€ 0,00

Participants (1)

Not available

Germany