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ADVANCED APPLICATIONS of LOW TEMPERATURE EPITAXIAL SILICON ALLOYS

Objective



Six research teams from research institutes and industrial sites, leading and of newly developed SiGe materials in advanced devices. "Standard" in the field of low-temperature epitaxial Si and SiGe, will hire young fellows (post-docs) hr. in total 21 Men-Years. An active search for means low x and smooth layers, but with atomically sharp interfaces. Not interested people will be organised within the EU. They will be called in only the bandgap engineering possibilities of SiGe but also the research groups active in the development of SiGe materials and their structural possibilities of epitaxial growth and stacking of layers with application in advanced devices. Next, young researchers from the partners different Ge-and doping content and thickness offer possibilities for improving CMOS performance: improved threshold voltage control, reduced sites can visit the other partners' labs for shorter stays in order to get an overview over the different other technologies.
S/D capacitance, lower power consumption, higher speed etc... Devices envisaged are a selective SiGe channel CMOS process avoiding S/D implant, Vertical MOSFET's (< 0.1 Fm gate length controlled by a layer thickness), Quantum Well SiGe CMOS on SIMOX wafers, poly SiGe gate CMOS. A first novel material is nanostructured Si1-xGex with high x, which structures itself into island while growing due to the excess strain; it forms the base for light emitting diodes. A second material is SiGeC, offering even wider band gap engineering possibilities, for use in high frequency MODFET's. One partner will develop relaxed, smooth SiGe substrates to be used for strained Si as well as SiGe epitaxy. A lot of exchange of wafers, analysis and measurements, and technology is planned, as well as joint theory development.

Funding Scheme

NET - Research network contracts

Coordinator

Interuniversitair Mikro-Electronika Centrum VZW
Address
75,Kapeldreef
3001 Heverlee
Belgium

Participants (7)

Centre National d'Études des Télécommunications (CNET)
France
Address
98 Chemin Du Vieux Chêne
38243 Meylan
Chalmers University of Technology AB
Sweden
Address
3,Fysikgraend
412 96 Göteborg
DELFT UNIVERSITY OF TECHNOLOGY
Netherlands
Address
17,Feldmannweg 17
2600 GA Delft
Forschungszentrum Jülich GmbH
Germany
Address
Wilhelm-johnen-straße
52405 Jülich
Institute for Particle and Nuclear Physics - Hungarian Academy of Sciences
Hungary
Address

1525 Budapest
MICROVACUUM LTD.
Hungary
Address
10,Kerekgyarto U. 10
1147 Budapest
NEDERLANDSE PHILIPS BEDRIJVEN BV
Netherlands
Address
4,Professor Holstlaan 4
5656 AA Eindhoven