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3-d radiation imaging detectors

Objective

Pixellated semiconductor detectors will be fabricated in the form of so-called "3-D" detectors. Instead of conventional, planar electrodes on the wafer surfaces, a matrix of uniform holes will be created through the semiconductor wafer thickness, and electrical contacts and/or p-n junctions created on the walls of these holes. Simulation studies and early prototyping show that detectors of this topology require lower bias voltages and are more radiation resistant. The project will develop methods for achieving smooth walls in the holes and for filling them with scintillator, to achieve higher conversion efficiency for X-ray detection. A further development will assess the value of this processing technology for neutron imaging applications by developing techniques for filling the pores with a suitable neutron converter material, such as LiF.

Funding Scheme

CSC - Cost-sharing contracts

Coordinator

UNIVERSITY OF GLASGOW
Address
University Avenue
G12 8QQ Glasgow
United Kingdom

Participants (7)

ALBERT-LUDWIGS-UNIVERSITAET FREIBURG
Germany
Address
Stefan Meier Strasse 21
79104 Freiburg (In Breisgau)
APPLIED SCINTILLATION TECHNOLOGIES LTD
United Kingdom
Address
Roydonbury Industrial Estate 8, Horsecroft Road
CM18 5BZ Harlow
CZECH TECHNICAL UNIVERSITY OF PRAGUE
Czechia
Address
Brehova 7
115 19 Praha 1
METOREX INTERNATIONAL OY
Finland
Address
7 C,nihtisillankuja 5
02631 Espoo
MID SWEDEN UNIVERSITY
Sweden
Address
Holmgatan 10
Sundsvall
ROYAL INSTITUTE OF TECHNOLOGY
Sweden
Address
229,Electrum 229
164 40 Kista
SURFACE TECHNOLOGY SYSTEMS PLC
United Kingdom
Address
Imperial Park
NP10 8UJ Newport