Objective
Pixellated semiconductor detectors will be fabricated in the form of so-called "3-D" detectors. Instead of conventional, planar electrodes on the wafer surfaces, a matrix of uniform holes will be created through the semiconductor wafer thickness, and electrical contacts and/or p-n junctions created on the walls of these holes. Simulation studies and early prototyping show that detectors of this topology require lower bias voltages and are more radiation resistant. The project will develop methods for achieving smooth walls in the holes and for filling them with scintillator, to achieve higher conversion efficiency for X-ray detection. A further development will assess the value of this processing technology for neutron imaging applications by developing techniques for filling the pores with a suitable neutron converter material, such as LiF.
Fields of science
Call for proposal
Data not availableFunding Scheme
CSC - Cost-sharing contractsCoordinator
G12 8QQ Glasgow
United Kingdom
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Participants (7)
79104 Freiburg (In Breisgau)
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CM18 5BZ Harlow
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115 19 Praha 1
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02631 Espoo
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Sundsvall
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164 40 Kista
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NP10 8UJ Newport
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