3-d radiation imaging detectors

Objective

Pixellated semiconductor detectors will be fabricated in the form of so-called "3-D" detectors. Instead of conventional, planar electrodes on the wafer surfaces, a matrix of uniform holes will be created through the semiconductor wafer thickness, and electrical contacts and/or p-n junctions created on the walls of these holes. Simulation studies and early prototyping show that detectors of this topology require lower bias voltages and are more radiation resistant. The project will develop methods for achieving smooth walls in the holes and for filling them with scintillator, to achieve higher conversion efficiency for X-ray detection. A further development will assess the value of this processing technology for neutron imaging applications by developing techniques for filling the pores with a suitable neutron converter material, such as LiF.

Programme(s)

• FP5-GROWTH - Programme for research technological development and demonstration on "Competitive and sustainable growth 1998-2002"

Topic(s)

• 1.1.3.-5. - RTD Activities of a Generic Nature : materials and their technologies for production and transformation and new and improved materials and production technologies in the steel field

Funding Scheme

CSC - Cost-sharing contracts

Coordinator

UNIVERSITY OF GLASGOW

Address

University Avenue
G12 8QQ Glasgow
United Kingdom

Participants (7)

ALBERT-LUDWIGS-UNIVERSITAET FREIBURG

Germany

Address

Stefan Meier Strasse 21
79104 Freiburg (In Breisgau)

APPLIED SCINTILLATION TECHNOLOGIES LTD

United Kingdom

Address

Roydonbury Industrial Estate 8, Horsecroft Road
CM18 5BZ Harlow

CZECH TECHNICAL UNIVERSITY OF PRAGUE

Czechia

Address

Brehova 7
115 19 Praha 1

METOREX INTERNATIONAL OY

Finland

Address

7 C,nihtisillankuja 5
02631 Espoo

MID SWEDEN UNIVERSITY

Sweden

Address

Holmgatan 10
Sundsvall

ROYAL INSTITUTE OF TECHNOLOGY

Sweden

Address

229,Electrum 229
164 40 Kista

SURFACE TECHNOLOGY SYSTEMS PLC

United Kingdom

Address

Imperial Park
NP10 8UJ Newport