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Content archived on 2024-05-27

Characterisation of ultra-thin high-k oxide layers (CUHKO)

Objective

The project addresses the development of the analysis techniques needed for the full physical characterization of the new thin high-k dielectric layers which are now in the development phase and which will be essential for the future sub 100 nm device technologies. The emphasis of the project is on analysis techniques that have the potential for fast, non-destructive in-line application and on a number of complementary techniques that need developments related to quantification and depth resolution. The goal is the combination of complementary analysis on the same samples so that by the mutual input, the different measurement and analysis procedures can be fully qualified leading to well established and directly applicable methodologies for the quality control of these layers. Emphasis is related to the layer thickness, the interfacial layer and the quantification of the composition including contaminants.

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Programme(s)

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Topic(s)

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Call for proposal

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Funding Scheme

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CSC - Cost-sharing contracts

Coordinator

INTERUNIVERSITAIR MIKRO-ELEKTRONICA CENTRUM VZW
EU contribution
No data
Address
Kapeldreef 75
3001 HEVERLEE
Belgium

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Total cost

The total costs incurred by this organisation to participate in the project, including direct and indirect costs. This amount is a subset of the overall project budget.

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Participants (5)

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