The silicon carbide (SiC) semiconductor material is today proving, from intense scientific and industrial development, its potential to replace and outperform silicon in several or all electronic devices for high-power, high-frequency and high-temperature applications. Systems using a SiC technology will have new and yet unachieved performances, e.g. high power handling capacities, low losses allowing energy savings and reduced manufacturing costs. The SiC device market is forecast to increase to $200 million by 2005. Several European companies, such as ABB, Siemens, Thomsson, Ericsson, Okmetic, Aixtron, Epigress, InPact, SiCrystal, and Norton, have today R&D activities in SiC. To promote the interaction and co-operation between European researchers and between academic and industrial researchers two European conferences about SiC and related materials (ECSCRM) are planned, where world-leading scientists from USA, Japan and Europe and young European researcher are brought together to facilitate the spread of knowledge in this fast-growing area.
The conferences will be held in September 2000 outside Erlangen, Germany and in September 2002 in Linköping, Sweden, with 250-300 participants. The programmes will be multidisciplinary covering the main areas of SiC research, but with a focus on the current most important problems or challenges. The main areas include growth of bulk and epitaxial material, characterization and material properties, processing such as implantation, doping and contacts, and finally devices including high power, high temperature, high frequency and sensors. The conference will also have the ambition the increase the general knowledge about SiC technology, and hopefully spreading the technology to additional areas or applications.