The idea to hold an European symposium on SiO2 and Advanced Dielectrics emerged following the observation that many physicists and engineers working in widely different areas were all basically involved with the same structural and defect related problems. The main objective of this symposium is to provide an overview of the state of art in the physics and chemistry of SiO2 and its applications. Moreover, topics will be extended to new dielectric materials in the microelectronics field, as reflected in the new title of the symposium. A further objective is to enhance the collaboration between scientists from European countries and to promote research involving young researchers.
This symposium will continue and extend a series of informal conferences, previously held in Caen (France) in 1992 and 1995, in Agelonde (France) in 1996 and in L'Aquila (Italy) in 1998. Approximately one hundred registered participants attended the two last meetings essentially from Italian and French communities. The participation of scientists from other European countries will be strongly encouraged in the frame of SiO2000. Another particularity of these conferences is the large place accorded to young researchers and PhD students. In 1996 and 1998 for example, a special rate was systematically instaured for all registered students and, in addition, the local organizing committee supported the full registration of a few PhD students.
Finally, for the third time, the possibility will be offered to all participants to submit their work for publication in a Special Issue of the Journal of Non-Crystalline Solids (the Proceedings of the previous conferences constitute the volumes 216 and 245 of this journal).