The aim of this project is to organise two high-level international conferences on the physics of light-matter coupling in nitrides (PLMCN). These two meetings will continue the series started by the first international conference on PLMCN organised in October 2000 in St-Nectaire (France) by the authors of the present proposal. The aim of these meetings is to stimulate the studies of the fundamental physics of light-matter interactions in wide-gap III-V semiconductors (gallium nitride and related materials). They will be combined with the working meetings of the research-training network CLERMONT ("Physics of Nitride Based Microcavities") and will allow the direct information exchange between the European scientists participating in the network and the leading specialists in this field from the USA, Japan, Russia and other countries.
The invited speakers selected by the Program committee on the base of suggestions by the International Advisory committee will cover the subjects of growth, optical spectroscopy and theory of low-dimensional structures based on GaN. Keynote speakers from "Nichia", "Thomson", "Aixtron", "Gelcore", "Spectraphyisics", and "Toshiba" companies will provide the close contact with industrial research programs. The particular attention will be paid to the problem of observation of the strong-coupling regime between exciton and photon modes in GaN based microcavities, which is a major challenge for the international scientific community at present.
The very large exciton binding energy in GaN is expected to permit to observe the strong coupling at room temperature that has never been done before in semiconductors. An intriguing opportunity of fabrication of a new opto-electronic device based on the stimulated scattering of exciton polaritons (recently discovered by one of the teams from the RTN CLERMONT) will be discussed in these meetings. The program of PLMCN meetings will contain both the contributions on the general physics of exciton-light coupling in semiconductors (2-3 invited papers at each meeting) and papers revealing the specifics of GaN-based structures. This will allow to bring together the representatives of "nitride and "exciton" communities and to stimulate the exchange of ideas between them. The strict limitation of the number of participants by 90 will allow the program committee to select the contributions of a very high actuality and scientific level, as it has already been done during the paper selection for the first PLMCN in 2000.