Objective
The main aim of the project is to obtain a deep understanding of the structure and formation mechanism of the small oxygen-related clusters (dimer, trimer, thermal donors) in Si and Ge. In spite of the great scientific and technological importance of this problem and almost 40 years of sustained effort, it remains to be solved. There have, however, been two recent advances that suggest that a solution can be readily found.
Firstly, an identification of the simplest oxygen aggregate in silicon, e.g. the oxygen dimer, has now been made through combined infrared absorption studies and ab-initio modelling. The combination of LVM spectroscopy with theoretical calculations clearly provides a new powerful tool for the identification of oxygen-related complexes in Si and Ge.
Secondly, the recent discovery of an enhanced formation of oxygen complexes in Si following hot electron irradiation and H-plasma treatments. These finding should allow the processes governing oxygen clustering to be understood and open up new possibilities for "oxygen defect engineering".
All the teams involved in the joint project (3 from Sweden, 1 from U. K., and 2 from Belarus) are well experienced in the studies of defects in semiconductors and have collaborated for a long time in studying oxygen-related phenomena in Si and Ge. Their complementary facilities, both experimental and theoretical, would enable us to:
- perform combined experimental (optical and electrical) and theoretical (ab-initio modelling) characterisation of small oxygen-related clusters in Si and Ge;
- elucidate the effects of various factors (impurity content, thermal pre-history, electron irradiation, H-plasma treatment) on the oxygen diffusion and clustering;
- develop a unified kinetic model of oxygen clustering in Si and Ge and apply the methods of "oxygen defect engineering" at elevated temperatures.
Scientific information would be exchanged between participants in three joint seminars held during the project. This will be in addition to the exchange of information via the Internet.
An essential part of the experimental work (mainly FTIR measurements) will be done at Linkoping University during a visit of researchers from Minsk.
The research program will extend for 30 months. By the end of the first year, the characterisation of small oxygen clusters in Si and Ge would be completed. At the end of the second year, their formation mechanisms would be ascertained. During the last six months, a unified model for oxygen clustering in Si and Ge at elevated temperatures will be developed and possible applications will be suggested.
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Programme(s)
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Coordinator
221 00 Lund
Sweden
The total costs incurred by this organisation to participate in the project, including direct and indirect costs. This amount is a subset of the overall project budget.