Objective
In this project, a comprehensive interdisciplinary research is proposed in order to deepen our knowledge on the effects of spin-dependent phenomena in bulk crystals and nanostructures of the semimagnetic semiconductors and their use for device applications. The main aims of the project are the production of new spin-dependent semimagnetic semiconductor structures, the development of original experimental techniques and fundamental investigation of new spin-dependent phenomena for new spin electronic devices.
The main objectives of the project are:
- to grow single crystals, thin films and nanostructures (spin superlattices, quantum dots) of II-VI based semimagnetic semiconductors with different magnetic components (Mn, Fe, Co-3d-elements and Eu, Dy, Gd - 4f-elements);
- to perform structural and morphological studies of the deposited monolayers, multi-layers and zero-dimensional structures;
- to investigate optical spectra and magnetooptical effects in order to elucidate spin behaviour in bulk crystals and nanostructures;
- to develop novel principles of manipulation and controlling of spins in the obtained crystals and nanostructures;
- to design prospective device schemes based on spin injection using semimagnetic semiconductors (crystals, films, nanostructures) as spin aligners.
The two NIS and two INTAS groups, which have reported many pioneering results in the field of semimagnetic semiconductor and their applications, will join their efforts to achieve the above aims.
The following results will be obtained by the end of the project:
- new technologies for synthesis and growth of II-VI semimagnetic semiconductors with different basic compounds and different incorporated magnetic ions in form of bulk crystals, multi-layer nanostructures and quantum dots;
- optimised and new experimental techniques and schemes to study the spin-dependent phenomena and to probe the electron spin inside the bulk crystals, quantum wells and quantum dots as well as their interface regions;
- new sensors and prototypes based on classical spin-dependent phenomena such as high- frequency light modulators, fibre optical magnetic field sensors, giant magnetoresistance sensors as well as quantum well and quantum dots (based on new spin injection phenomena of spin-polarised carriers across SMS) such as "magnetic field effect transistors" and related magnetic field sensors.
The scientific results obtained under this project are fundamental for generation of new spin electronics devices as spin transistors, spin memory devices and spin quantum computers.
The partners will protect the results by applying for patents and will look for potential investors to bring the proposed approaches from research developments to industrial level. The results to be obtained under this project will be widely disseminated through publications in scientific and technical journals, presentations at leading international conferences, specially organised seminars and workshops and by maintaining a specially designed Web page.
Call for proposal
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CT2 7NR Canterbury
United Kingdom