Electronic Structure of Transition Metal Silicides and Buried Solid-Solid Interfaces

Project Information

Grant agreement ID: INTAS-RFBR95-0565

Start date

End date

Funded under

• International Association for the promotion of cooperation with scientists from the independent states of the former Soviet Union (INTAS), 1993-

Total cost No data

EU contribution No data

Coordinated by

Universität Osnabrück
Germany

Objective

The study of electronic structure of 4d and 5d-transition metal silicides and buried solid-solid interfaces will be undertaken by XES, XPS and band structure calculations. Special attention will be paid for study of interfaces in transition metal/silicon system in dependence of heat treatment, ternary transition metal silicides prepared by ion-beam synthesis in dependence of fluence and irradiation conditions, Si/SiO2 system irradiated by high-energy electrons, TiO2/SiO2 and SiO2/Al2O3 system. The XES and XPS methods will be developed for quantitative analysis of chemical reactions and phases distribution in interfaces in depth. These methods will be applied for characterization of semiconducting devices (Ir-Si infrared detectors). The obtained results will be presented as scientific papers.

Programme(s)

• IC-INTAS - International Association for the promotion of cooperation with scientists from the independent states of the former Soviet Union (INTAS), 1993-

Topic(s)

• 1 - Physics, Astronomy, Astrophysics

Call for proposal

Data not available

Funding Scheme

Data not available

Coordinator

Universität Osnabrück

• EU contribution: No data
• Address: 49069 Osnabrück ; Germany
• Total cost: No data

Participants (1)

Russian Academy of Sciences - Ural Branch

Russia

• EU contribution: No data
• Address: 620219 Yekaterinburg
• Total cost: No data