Skip to main content

Particle Inspection for Advanced New Photomask Applications

Objective

The industry roadmap calls for ICs with feature sizes of 100 nm after 2002. Due to the danger of catastrophic yield loss caused by small defects and due to the value of the wafers, volume production will require recurrent assessment of critical level masks prior to their application in the lithographic process in order to detect any deterioration (particles, damage). The project will develop a high speed mask inspection system (10 min. for a 6" reticle) with very high sensitivity (80 nm). This performance will be achieved through the development of high resolution DUV optics with long working distance, high speed/ accuracy/stability stage and fast real-time image processing. A photo-mask defect printability study at 193 nm will compare prototype performance to 100nm node manufacturing needs.

Funding Scheme

CSC - Cost-sharing contracts

Coordinator

INFINEON TECHNOLOGIES AG
Address
St. Martin Strasse 53
81609 Muenchen
Germany

Participants (4)

INTERUNIVERSITAIR MICRO-ELECTRONICA CENTRUM VZW
Belgium
Address
Kapeldreef 75
3001 Leuven
LEICA MICROSYSTEMS WETZLAR GMBH
Germany
Address
Ernst-leitz Strasse 17-37
35578 Wetzlar
MICRO CONTROLE SA.
France
Address
11 Rue De Bois Sauvage
91000 Evry
THE UNIVERSITY OF NOTTINGHAM
United Kingdom
Address
University Park
NG7 2RD Nottingham