The industry roadmap calls for ICs with feature sizes of 100 nm after 2002. Due to the danger of catastrophic yield loss caused by small defects and due to the value of the wafers, volume production will require recurrent assessment of critical level masks prior to their application in the lithographic process in order to detect any deterioration (particles, damage). The project will develop a high speed mask inspection system (10 min. for a 6" reticle) with very high sensitivity (80 nm). This performance will be achieved through the development of high resolution DUV optics with long working distance, high speed/ accuracy/stability stage and fast real-time image processing. A photo-mask defect printability study at 193 nm will compare prototype performance to 100nm node manufacturing needs.
Funding SchemeCSC - Cost-sharing contracts
NG7 2RD Nottingham