Objective
The project will investigate the possibility of constructing a solid-state spin-based quantum information-processing device using doped fullerenes. Current designs require the doping of single atoms with ultra-high position precision while maintaining a regular silicon lattice structure. We here examine a variation where the qubit resides in the nuclear spin of a single dopant atom that is either attached or trapped inside a fullerene cage. A design for a quantum information-processing device is given using doped fullerenes which involves the positioning and fixing of individual fullerene molecules to a silicon surface. We will first develop techniques needed to fabricate the doped fullerene assemblies on silicon. Then, we will ascertain, via theory and experiments whether the physical system proposed can support the storage and manipulation of quantum information.
The project will investigate the possibility of constructing a solid-state spin-based quantum information-processing device using doped fullerenes. Current designs require the doping of single atoms with ultra-high position precision while maintaining a regular silicon lattice structure. We here examine a variation where the qubit resides in the nuclear spin of a single dopant atom that is either attached or trapped inside a fullerene cage. A design for a quantum information-processing device is given using doped fullerenes which involves the positioning and fixing of individual fullerene molecules to a silicon surface. We will first develop techniques needed to fabricate the doped fullerene assemblies on silicon. Then, we will ascertain, via theory and experiments whether the physical system proposed can support the storage and manipulation of quantum information.
OBJECTIVES
The main objective is to examine whether a spin-based solid-state (SBSS) quantum computing technology using doped fullerenes as a carrier for the qubits can be successful. A modification of current designs for a SBSS quantum computer is proposed, which uses doped fullerenes nano-positioned on Silicon. The nano-positioning of single dopant atoms may be more easily achieved using this doped fullerene based technology and thus may overcome the severe technical challenges faced by other designs for such a device.
For this technology to be successful, three crucial objectives must be met:
(a) the nano-engineering of doped fullerene structures on Silicon in a controlled and precise manner must be developed,
(b) the dopant atom attached to a fullerene molecule n the Si surface must behave as single electron donor within the electronic surface band structure of the Silicon,
(c) the nuclear and electronic spin relaxation lifetimes must be reasonably long.
DESCRIPTION OF WORK
The project comprises of a number of distinct parts that work together towards achieving the project's objectives. As doped fullerenes are not easily obtained, part of the project will be dedicated to the synthesis and production of these materials in sufficient quantities for use within the project. The nano-positioning of individual molecules using scanning tunnelling microscopy (STM) techniques will be investigated and the surface and electronic properties of a sub-monolayer of these materials on Silicn in UHV will be examined using STM and other surface analysis methods. Procedures whereby the fullerene cage can be disrupted and/or more strongly bonded to the Si surface will be examined, such as UV photo polymerisation, annealing and tunnelling current assisted polymerisation. Various methods of capping the nano-engineered structures to make the assembly air-resistant will also be investigated. These tasks will target objective (a). The local density of states will be resolved on a molecular level in the region of a doped fullerene on Si, using STM spectroscopy and the resulting band structures will be compared with numerical simulations. These tasks will target objective (b). Finally, the method of Optically Detected Magnetic Resonance will be developed to perform in situ EPR and NMR measurements with very high sensitivity and spatial resolution of a sub-monlayer of the nano-engineered doped fullerenes on Si. In concert with this, investigations into a STM assisted ESR measurement technique, which will e capable of measurements on molecular scales, will be undertaken. These tasks target objective (c).
Fields of science
- natural sciencesphysical sciencesopticsmicroscopy
- engineering and technologyelectrical engineering, electronic engineering, information engineeringelectronic engineeringcomputer hardwarequantum computers
- natural scienceschemical sciencesinorganic chemistrymetalloids
- natural sciencesphysical sciencesopticsspectroscopy
Call for proposal
Data not availableFunding Scheme
CSC - Cost-sharing contractsCoordinator
MAYNOOTH, CO. KILDARE
Ireland