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Advanced unified lateral DMOS transistor model for automotive circuit simulation

Objective

Many automotive circuits use DMOS transistors combined with CMOS logic. The main project objective is to validate that more reliable and competitive circuits can be designed with new DMOS simulation models. Actual models suffer from poor accuracy and they are technology specific. The new model will be physically based, scalable and usable for DMOS devices in modern technologies. Both a new macro-model and a compact analytical model will be developed that describe accurately DC and AC behaviour. Robust procedures for parameter extraction will be reached, with devices from partners. The model data will be statistically analysed and worst case and Monte-Carlo models will be developed. The objective includes the validation of the accuracy, by the measurement of designed circuits, after model implementation in commercial simulators. Another target is to use the model for reliability analysis, of DMOS circuits in order to guarantee endurance.

Funding Scheme

CSC - Cost-sharing contracts

Coordinator

AMI SEMICONDUCTOR BELGIUM
Address
Westerring 15
9700 Oudenaarde
Belgium

Participants (4)

ECOLE POLYTECHNIQUE FEDERALE DE LAUSANNE
Switzerland
Address
Ecublens
1015 Lausanne
INTERUNIVERSITAIR MICRO-ELECTRONICA CENTRUM VZW
Belgium
Address
Kapeldreef 75
3001 Leuven
ROBERT BOSCH GMBH
Germany
Address
Robert-bosch-platz1
70839 Gerlingen-schillerhoehe
SILVACO DATA SYSTEMS SARL
France
Address
55 Rue Blaise Pascal, Immeuble Silvaco Zirst Ii
38330 Montbonnot Saint Martin