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Content archived on 2024-05-27

Innovative Mems devices for WIDEband reconfigurable RF Microsystems

Objective

The project aims at exploring and innovating in the design, fabrication, modelling, electrical characterization and reliability of RF MEMS switches and programmable/tunable high-performance passive devices (inductors and capacitors), in order to provide new functionality and high-performance in RF IC architectures. The project is originally wide-band focused, with a frequency range from 800MHz up to 10GHz, which covers nowadays and future RF applications (ISM, GSM, 3rd mobile phone generation and HIPERLAN).

Three types of major core functions for reconfigurable RF microsystems are proposed to be realized using innovative devices:
(1) reconfigurable VCOs;
(2) tunable/programmable filters (tunable bandpass filters for antenna signal selection and notch filters for interference suppression) and;
(3) wide-band Variable True Time Delay Line (VTTDL). Technology fusion and 3D integration at device and circuit-block level are addressed.

Objectives:
The first major objective is concerned with the design and fabrication of wide-band (800MHz-10GHz), low-volta RF switches, high-Q on-chip programmable and/or tunable capacitors (C) and inductors (L).
A second objective is to develop accurate modelling and characterization techniques from electrostatic actuation up to 10GHz.
A third objective is to address the ageing characteristics of these devices as a first step to seek improvement in the reliability of such devices, in order to approach a faster industrialization.
In this context, harsh environment analysis will be carried out in order to qualify for airborne systems demands (special vibrations: 0.02-2kHz and temperatures in the range of: -55°C up to125°C).
The final objective is to achieve high performance and new functionality up to 6GHz, in core RF circuit bricks:
(1) Reconfigurable VCOs;
(2) Tunable/Programmable RF filters;
(3) Variable True Time Delay Lines. Adapted new packaging solutions are proposed for RF MEMS microsystems.

Work description:
The project proposes the development of basic MEMS device types for high-performance, low voltage operated, reconfigurable RF IC architectures:
(i) capacitive and contact RF switches;
(ii) tunable/programmable high-Q capacitors and;
(iii)programmable banks of high-Q inductors (in horizontal and out-of-plane architectures).
In this project RF MEMS devices meet the requirements of wideband metrics, low voltage operation, increased survivability and low cost. They provide certain new functionalities at circuit level via wideband programmability and tunability.

Innovative effort will be dedicated to two new types of contact switches:
(i) liquid/solid contact switch and;
(ii) the suspended gate MOS transistor.
The fabricated MEMS devices and related models are proposed to perform from 800MHzup to 10GHz, which corresponds to requirements of both airborne systems and civil mobile communications (ISM, GSM, 3rd mob. gen. and HIPERLAN). Substrate parasitic effects at high frequency will be accurately modelled. SOI (SOS) substrates will be evaluated as alternative to bulk silicon. Special attention will be paid to device characterization for harsh aeronautics conditions: special vibrations and larger temperatures ranges and especially reliability improvements.

The RF MEMS devices will be integrated in three major types of RF core circuits demonstrating new functionalities:
(1) reconfigurable VCOs;
(2) tunable bandpass filters for antenna signal selection and notch filters for interference suppression and;
(3) wide-band variable True Time Delay Line (VTTDL) based on programmable interconnects. Appropriate RF packaging is proposed.
The project addresses two major communication technology challenges: technology fusion (RF MEMS device fabrication compatible with IC technology) and 3D integration (flip-chip and in situ techniques). It proposes innovation at the RF passive RF MEMS device level, with direct impact on the performances and functionalities of RF ICs and their applications.

Milestones:
- Innovation in the design/fabrication of low-voltage RF MEMS switches, high-Q passive devices and RF ICs, with programmability and tunability characteristics; devices from 800 MHz up to 10 GHz and circuits up to 6GHz;
- Analytical models for standard simulators and characterization techniques for: RFMEMS contact and capacitive switches, high-Q programmable/tunable inductors and capacitors and programmable interconnects, including parasitic substrate effects;
- Harsh specs and ageing models.

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Coordinator

TRONIC'S MICROSYSTEMS
EU contribution
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Address
15, RUE DES MARTYRS
38054 GRENOBLE
France

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Total cost

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Participants (7)

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