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Content archived on 2024-05-27

Ultra wide band InP based quantum dot devices and applications covering the 1.4 - 1.65 m wavelength range


InP based InAs quantum dot structures will be developed as a new class of gain material for long wavelength telecommunication applications. Utilizing special dot properties, e.g. ultra wide gain bandwidth, high speed and low chirp, new devices and applications will be realised on this new gain material.

The major goals of the project will be the development of:
(a) ultra wide band InP based quantum dot laser and amplifier structures by gas source molecular beam epitaxy for 1.4 -1.65 µm applications;
(b) external cavity lasers with a mode hope free tuning range up to 300 nm;
(c) high speed semiconductor optical amplifiers with a gain bandwidth covering the whole communication wavelength range of 1.4 - 1.65 µm;
(d)direct modulated low chirp high speed single mode lasers and;
(e) single mode lasers with extended wavelengths towards 2 µm for gas sensor applications. For each topic leading expert partners in modelling, material growth, device processing and characterisation, system realisation and evaluation are contributing to this project.

- Development of InP based quantum dot structures with ultra wide gain bandwidth for the wavelength range of 1.4 - 1.65 µm;
- Growth of QD laser structures optimised for the application in tunable external cavity lasers (ECLs), SOAs and direct modulated single mode lasers;
- Realisation of ECLs with mode hope free total tuning range > 300 nm;
- Realisation of ultra wide band and high speed SOAs (> 300 nm, 40 GBit/s, > 10 dB);
- Fabrication of single mode emitting lasers based on DBR/DFB gratings with emission wavelengths covering the wavelength range of 1.4 - 1.65 µm for wavelength division multiplexing and 1.65 - 2 µm for sensor applications;
- Demonstration of high speed transmission > 10 GBit/s over long distances based on low chirp direct modulated high speed quantum dot lasers including bit error rate measurements.

Work description:
Within the frame of the project a new gain material based on InAs quantum dots grown on (Al,In,Ga)(As,P)/InP heterostructures will be developed by gas source molecular beam epitaxy covering the whole long wavelength telecommunication range between 1.4 and 1.65 µm.

The specific properties of quantum dot structures like wide gain bandwidth, low threshold current density, channel independent multi-wavelength and high speed amplification as well as low chirp behaviour at high speed modulation will be used to realise three major applications:
(1) Widely tunable external cavity laser (ECL) systems will be developed based on InP based quantum dot laser structures with a tuning range of up to 300 nm;
(2) Multi-wavelength wide band semiconductor optical amplifiers (SOAs) will be developed on InP based quantum dot laser structures covering a gain bandwidth of 300 nm. For this purpose Fabry-Perot lasers will be anti-reflection coated and characterized by the amplification properties of fast optical signals;
(3) Direct modulated low chirp singel mode emitting lasers (SMLs) will be developed on InP based quantum dot laser structures by fabricating DBR/DFB gratings. The static and dynamic properties of these devices will be characterised. Final high speed transmission experiments over long distances (10 - 50 km) including bit error measurements will be performed to demonstrate the low chirp behavior.

Major interesting system and device features will be modelled taking into account simulated properties of quantum dot structures and experimentally evaluated results. Based on these simulation results improved layer, device and system designs will be developed which should lead within 2-3 feedback loops to devices and systems with optimised performance for each application area.

M12 First ECL with QD chip, SOA with bandwidth over 200 nm;
M15 SML at 1.55 µm on QD materialM18 Demo of multi-wavelength amplification and fast revovery time;
M24 ECL with 200 nm tuning range, SOA with bandwidth over 300 nm;
M30 SMLs covering 1.4 - 1.65 µm;
M36 ECL with 300 nm tuning range, multi-wavelength and high speed amplification, direct modulated SMLs tested in transmission experiment (> 10 Gbit/s), SMLs with wavelengths 1.65 - 2 µm.

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Participants (5)