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Development and validation of Source, Optics And Resist In Next Generation EUV lithography

Objective

The objective of the current proposal is to carry out the research and development work necessary to provide a set of scaleable components for Extreme Ultraviolet Lithography (EUVL) and to validate their performances in producing sub-70 nm features on silicon using industrial compatible wafer processing technology. These components include a novel high repetition rate high intensity micro discharge pulse plasma EUV source, a set of matching multi-layer collection and projection mirror optics using an active mirror design and an optimised single layer EUV resist. The goal of the project includes optimisation necessary to provide the EU semiconductor industry with these components for future integration. The work will be carried out in a 36 months programme, by a trans-national team of 5 partners involving national research organizations and industrial SMEs in 3 countries, covering all the key areas of expertise required.

Objectives:
The road map of the world semiconductor industry demands the availability of a next generation lithography system by 2005 for commercial production of microelectronics with feature size below 70nm. Currently EUVL is one of the most favoured options. While engineering test stand on EUVL has been established to evaluate the technology, a number of key issues remain to be resolved for industrial application. The objective of the current proposal is to carry out the R&D work necessary to provide a set of scalable components for EUVL and to validate their performances in producing sub-70nm features on silicon using industrial compatible wafer processing technology. These components include a novel high rep rate high intensity discharge plasma EUV source, a set of matching multi-layer collection and projection mirror optics and optimised EUV resists. The goal is to develop the core competence to provide the EU semi conductor industry with these tools for future integration.

Work description:
The area most lagging in the development of commercial EUVL technology is the radiation source. EUV is currently produced using a high power laser at low total efficiency. The work here provides a cost effective alternative based on a high rep rate high efficiency micro plasma pulse discharge. The solution evolves from a EU TMR research project on intense pulsed capillary discharge plasma radiation sources. Work here will focus on radiation physics of dense plasmas and atomic physics. Full 2D numerical simulations of the high current discharge including equation of states and full radiation transport, in order to optimise the operating conditions for maximum radiation efficiency, will back the theoretical and experimental work. A novel high efficiency all solid state pulsed power driver will be developed to drive the discharge, providing a current pulse of <10ns at a rate of rise of >10^12 A/s. Specific work on electrode design will aim to allow operation life of 10^10 pulses at a rep rate of 5kHz.

EUV will be collected by a set of multi-layer reflection optics, the work of which forms the second part of the project. A novel multiple active mirror scheme will be developed to provide a cost effective solution for large numerical aperture. The multi-layer design aims to maximize the total radiation collected and projected onto the resist, matching the source closely. Debris mitigation solutions will be developed to protect the optics. The third area of work is the development of a high sensitivity single layer resist optimised for the EUV region, benefiting from the work on a current EU project on resist for Deep UV lithography. The R&D work on these 3 elements will be validated in a scaled EUVL test-rig to demonstrate the fabrication of < 70nm features.

Milestones:
Milestones set to chart the progress include: the completion of the Micro Plasma Pulse radiation source, the 5kHz High Repetition Rate High Current driver, the EUV Test System Specification, the Resist Specification for EUV Lithography, and the Demonstration of < 70nm features and the Final Report. They reflect the expected result during the project, each being a step forward towards the final achievement, on the development of leadership skill in components for a EUVL system in future.

Funding Scheme

CSC - Cost-sharing contracts

Coordinator

EPPRA SAS
Address
16 Ave Du Quebec - Parc D'aff Silic Villebon-courtaboeuf
91140 Villebon Sur Yvette
France

Participants (3)

INSTITUTUL NATIONAL DE CERCETARE-DEZVOLTARE PENTRU OPTOELECTRONICA INOE 2000 RA
Romania
Address
1, Atomistilor Street
76900 Magurele
NATIONAL CENTRE FOR SCIENTIFIC RESEARCH "DEMOKRITOS"
Greece
Address

15310 Aghia Paraskevi Attikis
NATIONAL RESEARCH FOUNDATION
Greece
Address
Vas. Konstantinou 48
11635 Athens