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Content archived on 2024-05-27

Gallium-arsenide with Orientation-patterning for All-optical non-Linear Signal-processing

Objective

Innovative tailoring of non-linear optical properties of GaAs wafers, used to manufacture guided-wave photonic functional components, is a key to competitive high-speed wavelength management in the telecommunication region. Targeting breakthroughs in terms of conversion efficiency and versatility, this project will explore a novel processing concept and carry out quantitative assessment of key parameters in order to weight the risk against prospects for a large scope of applications. At a time when the part of ultra fast modules relying on optical functions keeps increasing, GOALS concept opens on very rich semiconductor research: in the long term, it will enable monolithic integration of pump diodes with the above wave guide devices, turning them into broadband multi-functional all-optical data processing chips.

OBJECTIVES
The GOALS consortium wants to promote the use of the high intrinsic quadratic no linearity of widely used semiconductor materials as a competitive solution to manufacture a large scope of ultra fast all-optical data processing devices. The corresponding switching, WDM-oriented frequency conversion, and regeneration functions will render practical future high capacity telecommunication networks needed to implement a user-friendly information society. The basic technique involves wave mixing in wave guides engineered with the proper spatial modulation of their non-linear optical properties, according to the laws of quasi-phase matching. The project aims at assessing the feasibility of such orientation-patterned wave guides with standard fabrication techniques, using gallium arsenide as the starting material.

DESCRIPTION OF WORK
GOALS partners intend to focus their research effort on the study of the major obstacles that may hinder practical applications of orientation-patterned GaAs wave guides. This approach justifies the request for an Assessment Project. The following risks, starting from most critical issues, has been identified and can be used in practice as relevant evaluation criteria against which the project outputs can be weighed:
- Final scattering and propagation losses should be kept low;
- The effective non-linear coefficient of quasi-phase matched interactions, taking into account actual orientation-patterning and wave guide quality, should reach at least 50% of the theoretical value calculated for a perfect structure;
- The thickness and homogeneity of GaAs material obtained as a result of the thick growth step should not impinge on the polishing step and limit the size of the components (diced from 2 inches wafers).

Towards these goals, the selected methodology involves component processing, modelling and optical measurements on the guiding structures:
- Sample fabrication will start with orientation patterning of starting wafers, followed by re-growth of GaAs. The surface preparation step and final fabrication of waveguides will then take place. Some samples will be characterised during the process to benefit from feedback for subsequent batches;
- Wave guide design will rely on data from literature and early measurements to provide optimised fabrication parameters;
- Optical characterisation, both linear (evaluation of losses, effective index measurements) and non-linear (derivation of effective NLO coefficient from SHG efficiency measurements, DFG characterisation), will be implemented, putting the emphasis on assessment of above risks.

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ACM - Preparatory, accompanying and support measures

Coordinator

THALES
EU contribution
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Address
45 RUE DE VILLIERS
92200 NEUILLY SUR SEINE
France

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