The quantitative determination of junction depths and lateral outdiffusion lengths as well as the measurement of carrier concentration form an essential part in the control of semiconductors processing. In this project the spreading resistance technique (SRP) for the determination of Si structures of:
- junction depths,
- lateral spreading with outdiffusion lengths
- carrier concentrations,
will be extended in resolution down to the nanometre range and improved in view of its possible standardisation.
The work is in progress.