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Content archived on 2024-04-16

THE CARACTERISATION OF ION IMPLANTED GAS BY OPTICAL AND NUCLEAR METHODS

Objective


Significant progress has been made in the understanding of ion implanted impurities in gallium arsenide. In particular, indium, cadmiun, mercury, selenium, zinc, tin and bromine radioactive isotopes have been implanted which have helped in developing a better understanding of the implantation process in gallium arsenide and the defects introduced as a result of the implantation process. For the first time, a technique has been established to study the electrical characteristics of short lived perturbed angular correlation probes in gallium arsenide. Thus both electrical and perturbed angular correlation measurements can be performed on similar samples immediately after implantation. For example, the short lived isotope selenium-73, which is a donor impurity in gallium arsenide, has been studied in this way. However, the development of a detailed model for the incorporation of these impurities in the gallium arsenide lattice is still not complete.
Radioactive implants of In+, Sb+, Cd+, Hg+, Se+, Zn+ and Ge+ will be carried out into previously implanted GaAs substrates in order to perform PAC measurements. The results will be compared with detailed studies of non-radioactive implants using electrical, optical and Rutherford backscattering measurements in particular. Rapid thermal annealing will be used to process samples, the aim being to develop detailed models for the incorporation of the impurities in the GaAs lattice. The result should be a process model will be useful to industry.

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UNIVERSITY OF SURREY
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GU2 5XH GUILDFORD
United Kingdom

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