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IMPROVED PICOSECOND OPTICAL SWITCHING WITH III-V QUANTUM WELL STRUCTURES

Objective


Picosecond recovery time of exciton absorption has been measured in an InGaAs/InP multiple quantum well (MQW) using a pump probe technique. A model was developed for absorption recovery time taking the lateral diffusion of cameras into account, as well as their recombination at the surface.
The development of high speed optoelectronics is limited by
the absence of low power optical switches. Suitable devices have been proposed, and fabricated from III-V semiconductor quantum wells. We propose to develop new structures for improving the response time of such devices using selectively ion bombarded mesa and line structures.

Funding Scheme

CSC - Cost-sharing contracts

Coordinator

UNIVERSITY COLLEGE CORK, NATIONAL UNIVERSITY OF IRELAND, CORK
Address
Western Road, Presentation Buildings
30 Cork
Ireland

Participants (3)

THE PROVOST, FELLOWS AND SCHOLARS OF THE COLLEGE OF THE HOLY AND UNDIVIDED TRINITY OF QUEEN ELIZABETH NEAR DUBLIN HEREINAFTER TRINITY COLLEGE DUBLIN
Ireland
Address
Trinity College
2 Dublin
Thomson-CSF
France
Address
173,Boulevard Haussmann 173
75415 Paris
UNIVERSIDAD POLITECNICA DE MADRID
Spain
Address
Av. Ramiro De Maeztu 7 S/n
28040 Madrid