Picosecond recovery time of exciton absorption has been measured in an InGaAs/InP multiple quantum well (MQW) using a pump probe technique. A model was developed for absorption recovery time taking the lateral diffusion of cameras into account, as well as their recombination at the surface.
The development of high speed optoelectronics is limited by
the absence of low power optical switches. Suitable devices have been proposed, and fabricated from III-V semiconductor quantum wells. We propose to develop new structures for improving the response time of such devices using selectively ion bombarded mesa and line structures.
Funding SchemeCSC - Cost-sharing contracts