The fundamental science which underlys the technique of photo-assisted chemical processing for III-V semiconductors remains poorly
whilst the potential of the approach has been clearly demonstrated. This programme initially aims to evaluate selected photo-assisted routes and precursor systems for the processing of GaAs. The critical chemical and physical processes which occur with relevance to the processing requirements of etching, metallisation and insulator formation will then be studied. Specific systems suggested from this work will then be optimised. The final phase of the programme will involve the demonstration of device quality surface features and interfaces on the semiconductor for each of the processing steps, thus allowing a complete strategy for the photo-processing of GaAs to be developed. Such a strategy should be widely applicable within the field of III-V materials.
Funding SchemeCSC - Cost-sharing contracts
3502 GA Utrecht
WC1E 6BT London