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PHOTO-ASSISTED CHEMICAL PROCESSING FOR GAAS

Objective



The fundamental science which underlys the technique of photo-assisted chemical processing for III-V semiconductors remains poorly
whilst the potential of the approach has been clearly demonstrated. This programme initially aims to evaluate selected photo-assisted routes and precursor systems for the processing of GaAs. The critical chemical and physical processes which occur with relevance to the processing requirements of etching, metallisation and insulator formation will then be studied. Specific systems suggested from this work will then be optimised. The final phase of the programme will involve the demonstration of device quality surface features and interfaces on the semiconductor for each of the processing steps, thus allowing a complete strategy for the photo-processing of GaAs to be developed. Such a strategy should be widely applicable within the field of III-V materials.

Funding Scheme

CSC - Cost-sharing contracts

Coordinator

University College London
Address
Gower Street
WC1E 6BT London
United Kingdom

Participants (5)

Centre National d'Études des Télécommunications (CNET)
France
Address
38-40 Rue Du Général Leclerc
92131 Issy-les-moulineaux
FOUNDATION FOR FUNDAMENTAL RESEARCH ON MATTER
Netherlands
Address
659,Van Vollenhovenlaan 659
3502 GA Utrecht
IMPERIAL COLLEGE OF SCIENCE, TECHNOLOGY AND MEDICINE
United Kingdom
Address
South Kensington Campus
London
UNIVERSIDADE DE SANTIAGO DE COMPOSTELA
Spain
Address
Pazo De San Xerome - Plaza Do Obradoiro S/n
Santiago De Compostela
University College London
United Kingdom
Address
Gower Street
WC1E 6BT London