Objective
The 3 MV Pelletron accelerator has been in operation for a year, and 3 beam lines have been completed. A large area implantation stage was installed to permit homogeneous high energy implantations, up to about 10 MeV. Range parameters of heavy ions of megaelectronvolt energies in silicon and other elemental semiconductors have been measured.
A high current ion implanter with migaelectronvolt energy has been set up. Precise measurements of the physical properties relevant to ion implantation modelling, such as ion stopping power, ranges and radiation damage, have been performed. The charge state distribution of transmitted ion beams was measured using an electromagnetic analyser. Results for silicon crystal and nitrogen ions in the range 0.7 to 1.4 MeV are presented.
X-ray double crystal diffractometry was used to measure the static disorder and strain profiles in silicon samples implanted with nitrogen, boron, arsenic, phosphor and silicon ions. Gallium arsenide implanted with silicon was also studied.
A new high energy ion implantation facility was set up. A first beam line equipped with an electrostatic device has been constructed. Experiments have been carried out on the accumulation process of metallic impurities formed by the implantation of copper ions and argon ions. The possibility of using high energy ion implantation to create, beyond the active region, a damaged area towards which impurities would be attracted was investigated in silicon samples contaminated with silver and platinum.
Studies were carried out on the effect of high projective charge states on the electronic and nuclear stopping powers, as well as on damage production and sputtering. A computer code successfully tested against experiments on high energy implantation into silicon crystals. Work also continued in modelling the effects of plural and multiple scattering, and the particle detector pulse shapes in surface barrier silicon detectors. In order to test different electronic stopping models suitable for crystalline targets, a program was written which uses chain potentials for the channelled particles. A code which calculates 3-dimensional high energy range distribution by fully analytic means has been updated and improved.
The 2 MV implanter has been further characterised, and the performances of the source and stations have been improved.
Implantation of 2 MeV iron-56 ions using the sputter source has enabled the fabrication of deep buried layers of semiconducting beta-iron silicide in silicon. Tantalum silicide was formed by implanting tantalum-181 ions into silicon. The formation of precipitates of tantalum silicide after annealling was inferred from spectra. The formation of a double buried layer of silicon oxide (by implanting oxygen-16 ions into silicon) was studied as a means of fabricating buried double wave guides in silicon. The production of pure high energy beams of silicon-28 ions has enabled the growth of anorphous layers in both silicon and silicon germanide substrates to be investigated. Fluorine-19 ions have been implanted into aluninium gallium arsenide/gallium arsenide multiquantum wells to enable the formation to extended cavity lasers to be examined. Deep uniformly doped layers of gallium arsenide have been produced, and to activation of multiple implants and the effect of compensating implants in the layers have been studied. Ion beams of germanium-74 and erbium-166 have been produced for implantation into silicon and silicon germanode for optoelectronic applications.
European Research Teams are almost not present in the field of High Energy Implantation. The non-availability in Europe of implanters suitable for High Energy processing has been the main reason of the lack of advanced knowledge in this field.
A consortium among several research institutes has been formed to propose this operation with the following goals to be reached in 3 years:
1- Convert or improve high energy machines, that will be supplied on national funding, by installing a dedicated beam line and suitable automated end station to be used as common facilities.
2- Perform the necessary experiments to get the knowledge in the basic phenomena, necessary for the development of a theoretical process modelling suitable for High Energy Implantation.
Fields of science (EuroSciVoc)
CORDIS classifies projects with EuroSciVoc, a multilingual taxonomy of fields of science, through a semi-automatic process based on NLP techniques. See: The European Science Vocabulary.
CORDIS classifies projects with EuroSciVoc, a multilingual taxonomy of fields of science, through a semi-automatic process based on NLP techniques. See: The European Science Vocabulary.
- natural sciences chemical sciences inorganic chemistry noble gases
- natural sciences chemical sciences inorganic chemistry transition metals
- natural sciences chemical sciences inorganic chemistry post-transition metals
- natural sciences physical sciences electromagnetism and electronics semiconductivity
- natural sciences chemical sciences inorganic chemistry metalloids
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Coordinator
40129 Bologna
Italy
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