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Content archived on 2024-04-15

ELECTRONIC PROPERTIES OF AMORPHOUS SEMICONDUCTORS

Objective


Most of the theoretical effort has been concentrated on the improvement, the extension and the unification of the existing models to include bonding properties, banding properties and structural properties. The combined critical path analysis-partial wave analysis (CPA-PWA) and small cluster methods have been used for a description of silicon carbide. This approach, combining a very successful effective medium long range method with a local bonding description, based on small cluster calculations, aims at achieving a fundamental understanding. This combined scheme is potentially capable of producing good quality results for a large variety of diverse physical quantities. These diverse quantities include optical transport properties, localisation parameters, mean free path, density of states at the mobility edge, inner core binding energies, changes of binding energies and other characteristics.

Fields of science (EuroSciVoc)

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Programme(s)

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Topic(s)

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Call for proposal

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Funding Scheme

Funding scheme (or “Type of Action”) inside a programme with common features. It specifies: the scope of what is funded; the reimbursement rate; specific evaluation criteria to qualify for funding; and the use of simplified forms of costs like lump sums.

CSC - Cost-sharing contracts

Coordinator

Foundation for Research and Technology-Hellas
EU contribution
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Address

71110 Heraklion-Crete
Greece

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Total cost

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Participants (2)

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