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Phase Change Memory Advanced universal Switches through Thin alteRnating laYers

Phase Change Memory Advanced universal Switches through Thin alteRnating laYers

Objective

Exploiting the potential of engineered Chalcogenide Super Lattices to achieve a breakthrough in power dissipation and switching speed of PC Memories, toward the realization of a "universal memory".
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Coordinator Contact

Andrea Redaelli (Dr.)

Coordinator

MICRON SEMICONDUCTOR ITALIA SRL

Address

Via Camillo Olivetti 2
20864 Agrate Brianza

Italy

Administrative Contact

Seminara Manuela (Dr.)

Participants (5)

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RHEINISCH-WESTFAELISCHE TECHNISCHE HOCHSCHULE AACHEN

Germany

FORSCHUNGSVERBUND BERLIN E.V.

Germany

ELETTRA - SINCROTRONE TRIESTE SCPA

Italy

RIJKSUNIVERSITEIT GRONINGEN

Netherlands

THE CHANCELLOR, MASTERS AND SCHOLARS OF THE UNIVERSITY OF CAMBRIDGE

United Kingdom

Project information

Grant agreement ID: 317746

  • Start date

    1 October 2012

  • End date

    30 September 2015

Funded under:

FP7-ICT

  • Overall budget:

    € 4 400 621

  • EU contribution

    € 3 067 901

Coordinated by:

MICRON SEMICONDUCTOR ITALIA SRL

Italy