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Silicon Carbide Nanowires for Electronic and biosensing applications

From 2016-04-01 to 2017-09-30 | SiCWIRE Website

Project details

Total cost:

EUR 138 807

EU contribution:

EUR 138 807

Coordinated in:

France

Call for proposal:

H2020-MSCA-IF-2014See other projects for this call

Funding scheme:

MSCA-IF-EF-ST - Standard EF

Objective

Deliverables

Deliverables not available

Publications

  • SiC Nanowire Field-Effect-Transistors
    Author(s): Konstantinos Zekentes, Edwige Bano
  • Top-down 3C-SiC NWFETs
    Author(s): Jihoon Choi, Edwige Bano, Anne Henry, Giovanni Attolini, Konstantinos Zekentes
    Published in: 40th Workshop on Compound Semiconductor Devices and Integrated Circuits (WOCSDICE-EXMATEC 2016), Jun 2016, Aveiro, Portugal, 2016. 
  • Cross-section doping topography of 4H-SiC VJFETs by various techniques
    Author(s): K. Tsagaraki, M. Nafouti, H. Peyré, K. Vamvoukakis, N. Makris, M. Kayambaki, A. Stavrinidis, G. Konstantinidis, M. Panagopoulou, D. Alquier, K. Zekentes
  • Channel width effect on the operation of 4H-SiC vertical JFETs
    Author(s): K. Vamvoukakis, D. Stefanakis, A. Stavrinidis, K. Vassilevski, G. Konstantinidis, M. Kayambaki, K. Zekentes
    Published in: physica status solidi (a), issue 214/4, 2017. Page(s) 1600452.  ISSN: 1862-6300
    DOI: 10.1002/pssa.201600452
  • Technology and performance of SiC- based Nanowire Field Effect Transistors (NWFETs)
    Author(s): Konstantinos Zekentes, Edwige Bano

Coordinator

INSTITUT POLYTECHNIQUE DE GRENOBLE
France

EU contribution: EUR 138 807


AVENUE FELIX VIALLET 46
38031 GRENOBLE CEDEX 1
France
Activity type: Higher or Secondary Education Establishments

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