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Silicon Carbide Nanowires for Electronic and biosensing applications

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Publications

Cross-section doping topography of 4H-SiC VJFETs by various techniques

Author(s): K. Tsagaraki, M. Nafouti, H. Peyré, K. Vamvoukakis, N. Makris, M. Kayambaki, A. Stavrinidis, G. Konstantinidis, M. Panagopoulou, D. Alquier, K. Zekentes
Published in: 2018

Top-down 3C-SiC NWFETs

Author(s): Jihoon Choi, Edwige Bano, Anne Henry, Giovanni Attolini, Konstantinos Zekentes
Published in: 40th Workshop on Compound Semiconductor Devices and Integrated Circuits (WOCSDICE-EXMATEC 2016), Jun 2016, Aveiro, Portugal, 2016

SiC Nanowire Field-Effect-Transistors

Author(s): Konstantinos Zekentes, Edwige Bano
Published in: 2016

Channel width effect on the operation of 4H-SiC vertical JFETs

Author(s): K. Vamvoukakis, D. Stefanakis, A. Stavrinidis, K. Vassilevski, G. Konstantinidis, M. Kayambaki, K. Zekentes
Published in: physica status solidi (a), Issue 214/4, 2017, Page(s) 1600452, ISSN 1862-6300
DOI: 10.1002/pssa.201600452

Technology and performance of SiC- based Nanowire Field Effect Transistors (NWFETs)

Author(s): Konstantinos Zekentes, Edwige Bano
Published in: 2017