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3C-SiC Hetero-epitaxiALLy grown on silicon compliancE substrates and 3C-SiC substrates for sustaiNable wide-band-Gap powEr devices

Deliverables

D6.4

Report on specific market needs

D6.8

CHALLENGE-project webpage

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Publications

Solving the critical thermal bowing in 3C-SiC/Si(111) by a tilting Si pillar architecture

Author(s): Marco Albani, Anna Marzegalli, Roberto Bergamaschini, Marco Mauceri, Danilo Crippa, Francesco La Via, Hans von Känel, Leo Miglio
Published in: Journal of Applied Physics, Issue 123/18, 2018, Page(s) 185703, ISSN 0021-8979
DOI: 10.1063/1.5019325

From thin film to bulk 3C-SiC growth: Understanding the mechanism of defects reduction

Author(s): F. La Via, A. Severino, R. Anzalone, C. Bongiorno, G. Litrico, M. Mauceri, M. Schoeler, P. Schuh, P. Wellmann
Published in: Materials Science in Semiconductor Processing, Issue 78, 2018, Page(s) 57-68, ISSN 1369-8001
DOI: 10.1016/j.mssp.2017.12.012

Protrusions reduction in 3C-SiC thin film on Si

Author(s): Massimo Zimbone, Marco Mauceri, Grazia Litrico, Eric Gasparo Barbagiovanni, Corrado Bongiorno, Francesco La Via
Published in: Journal of Crystal Growth, Issue 498, 2018, Page(s) 248-257, ISSN 0022-0248
DOI: 10.1016/j.jcrysgro.2018.06.003

Power Electronic Semiconductor Materials for Automotive and Energy Saving Applications - SiC, GaN, Ga 2 O 3 , and Diamond

Author(s): Peter J. Wellmann
Published in: Zeitschrift für anorganische und allgemeine Chemie, Issue 643/21, 2017, Page(s) 1312-1322, ISSN 0044-2313
DOI: 10.1002/zaac.201700270

Growing bulk-like 3C-SiC from seeding material produced by CVD

Author(s): P. Schuh, M. Arzig, G. Litrico, F. La Via, M. Mauceri, P. J. Wellmann
Published in: physica status solidi (a), Issue 214/4, 2017, Page(s) 1600429, ISSN 1862-6300
DOI: 10.1002/pssa.201600429

Characterization of protrusions and stacking faults in 3C-SiC grown by sublimation epitaxy using 3C-SiC-on-Si seeding layers

Author(s): Michael Schoeler, Philipp Schuh, Grazia Litrico, Francesco La Via, Marco Mauceri, Peter J. Wellmann
Published in: Advanced Materials Proceedings, Issue 2/12, 2017, Page(s) 774-778, ISSN 2002-4428
DOI: 10.5185/amp.2017/419

Sublimation growth of bulk 3C-SiC using 3C-SiC-on-Si (1 0 0) seeding layers

Author(s): P. Schuh, M. Schöler, M. Wilhelm, M. Syväjärvi, G. Litrico, F. La Via, M. Mauceri, P.J. Wellmann
Published in: Journal of Crystal Growth, Issue 478, 2017, Page(s) 159-162, ISSN 0022-0248
DOI: 10.1016/j.jcrysgro.2017.09.002

3C-SiC Growth on Inverted Silicon Pyramids Patterned Substrate

Author(s): Massimo Zimbone, Marcin Zielinski, Corrado Bongiorno, Cristiano Calabretta, Ruggero Anzalone, Silvia Scalese, Giuseppe Fisicaro, Antonino La Magna, Fulvio Mancarella, Francesco La Via
Published in: Materials, Issue 12/20, 2019, Page(s) 3407, ISSN 1996-1944
DOI: 10.3390/ma12203407

Temperature Investigation on 3C-SiC Homo-Epitaxy on Four-Inch Wafers

Author(s): Anzalone, Zimbone, Calabretta, Mauceri, Alberti, Reitano, La Via
Published in: Materials, Issue 12/20, 2019, Page(s) 3293, ISSN 1996-1944
DOI: 10.3390/ma12203293

Growth, Defects and Doping of 3C-SiC on Hexagonal Polytypes

Author(s): Rositsa Yakimova, Ivan G. Ivanov, Lasse Vines, Margareta K. Linnarsson, Andreas Gällström, Filippo Giannazzo, Fabrizio Roccaforte, Peter Wellmann, Mikael Syväjärvi, Valdas Jokubavicius
Published in: ECS Journal of Solid State Science and Technology, Issue 6/10, 2017, Page(s) P741-P745, ISSN 2162-8769
DOI: 10.1149/2.0281710jss

Sublimation growth of bulk 3C-SiC using 3C-SiC-on-Si (1 0 0) seeding layers

Author(s): P. Schuh, M. Schöler, M. Wilhelm, M. Syväjärvi, G. Litrico, F. La Via, M. Mauceri, P.J. Wellmann
Published in: Journal of Crystal Growth, Issue 478, 2017, Page(s) 159-162, ISSN 0022-0248
DOI: 10.1016/j.jcrysgro.2017.09.002

Simulation of the Growth Kinetics in Group IV Compound Semiconductors

Author(s): Antonino La Magna, Alessandra Alberti, Erik Barbagiovanni, Corrado Bongiorno, Michele Cascio, Ioannis Deretzis, Francesco La Via, Emanuele Smecca
Published in: physica status solidi (a), Issue 216/10, 2018, Page(s) 1800597, ISSN 1862-6300
DOI: 10.1002/pssa.201800597

3C-SiС Hetero-Epitaxially Grown on Silicon Compliance Substrates and New 3C-SiС Substrates for Sustainable Wide-Band-Gap Power Devices (CHALLENGE)

Author(s): Francesco La Via, Fabrizio Roccaforte, Antonino La Magna, Roberta Nipoti, Fulvio Mancarella, Peter Wellman, Danilo Crippa, Marco Mauceri, Peter Ward, Leo Miglio, Marcin Zielinski, Adolf Schöner, Ahmed Nejim, Laura Vivani, Rositza Yakimova, Mikael Syväjärvi, Gregory Grosset, Frank Torregrosa, Michael Jennings, Philip A. Mawby, Ruggero Anzalone, Salvatore Coffa, Hiroyuki Nagasawa
Published in: Materials Science Forum, Issue 924, 2018, Page(s) 913-918, ISSN 1662-9752
DOI: 10.4028/www.scientific.net/msf.924.913

Stacking Faults Defects on 3C-SiC Homo-Epitaxial Films

Author(s): Grazia Litrico, Ruggero Anzalone, Alessandra Alberti, Corrado Bongiorno, Giuseppe Nicotra, Massimo Zimbone, Marco Mauceri, Salvatore Coffa, Francesco La Via
Published in: Materials Science Forum, Issue 924, 2018, Page(s) 124-127, ISSN 1662-9752
DOI: 10.4028/www.scientific.net/msf.924.124

Elimination of step bunching in the growth of large-area monolayer and multilayer graphene on off-axis 3C SiC (111)

Author(s): Yuchen Shi, Alexei A. Zakharov, Ivan G. Ivanov, G. Reza Yazdi, Valdas Jokubavicius, Mikael Syväjärvi, Rositsa Yakimova, Jianwu Sun
Published in: Carbon, Issue 140, 2018, Page(s) 533-542, ISSN 0008-6223
DOI: 10.1016/j.carbon.2018.08.042

A comparative study of high-quality C-face and Si-face 3C-SiC(1 1 1) grown on off-oriented 4H-SiC substrates

Author(s): Yuchen Shi, Valdas Jokubavicius, Pontus Höjer, Ivan G Ivanov, G Reza Yazdi, Rositsa Yakimova, Mikael Syväjärvi, Jianwu Sun
Published in: Journal of Physics D: Applied Physics, Issue 52/34, 2019, Page(s) 345103, ISSN 0022-3727
DOI: 10.1088/1361-6463/ab2859

A nanostructured NiO/cubic SiC p–n heterojunction photoanode for enhanced solar water splitting

Author(s): Jingxin Jian, Yuchen Shi, Sebastian Ekeroth, Julien Keraudy, Mikael Syväjärvi, Rositsa Yakimova, Ulf Helmersson, Jianwu Sun
Published in: Journal of Materials Chemistry A, Issue 7/9, 2019, Page(s) 4721-4728, ISSN 2050-7488
DOI: 10.1039/c9ta00020h

3C-SiC grown on Si by using a Si1-xGex buffer layer

Author(s): M. Zimbone, M. Zielinski, E.G. Barbagiovanni, C. Calabretta, F. La Via
Published in: Journal of Crystal Growth, Issue 519, 2019, Page(s) 1-6, ISSN 0022-0248
DOI: 10.1016/j.jcrysgro.2019.03.029

Intentional Incorporation and Tailoring of Point Defects during Sublimation Growth of Cubic Silicon Carbide by Variation of Process Parameters

Author(s): Michael Schöler, Maximilian W. Lederer, Philipp Schuh, Peter J. Wellmann
Published in: physica status solidi (b), Issue 257/1, 2019, Page(s) 1900286, ISSN 0370-1972
DOI: 10.1002/pssb.201900286

1300°C Annealing of 1 × 10 20  cm −3 Al + Ion Implanted 3C-SiC/Si

Author(s): Roberta Nipoti, Mariaconcetta Canino, Marcin Zielinski, Frank Torregrosa, Alberto Carnera
Published in: ECS Journal of Solid State Science and Technology, Issue 8/9, 2019, Page(s) P480-P487, ISSN 2162-8769
DOI: 10.1149/2.0121909jss

Growth of Large-Area, Stress-Free, and Bulk-Like 3C-SiC (100) Using 3C-SiC-on-Si in Vapor Phase Growth

Author(s): Schuh, la Via, Mauceri, Zielinski, Wellmann
Published in: Materials, Issue 12/13, 2019, Page(s) 2179, ISSN 1996-1944
DOI: 10.3390/ma12132179

Limitations during Vapor Phase Growth of Bulk (100) 3C-SiC Using 3C-SiC-on-SiC Seeding Stacks

Author(s): Philipp Schuh, Johannes Steiner, Francesco La Via, Marco Mauceri, Marcin Zielinski, Peter J. Wellmann
Published in: Materials, Issue 12/15, 2019, Page(s) 2353, ISSN 1996-1944
DOI: 10.3390/ma12152353

Impact of Stacking Faults and Domain Boundaries on the Electronic Transport in Cubic Silicon Carbide Probed by Conductive Atomic Force Microscopy

Author(s): Filippo Giannazzo, Giuseppe Greco, Salvatore Di Franco, Patrick Fiorenza, Ioannis Deretzis, Antonino La Magna, Corrado Bongiorno, Massimo Zimbone, Francesco La Via, Marcin Zielinski, Fabrizio Roccaforte
Published in: Advanced Electronic Materials, 2020, Page(s) 1901171, ISSN 2199-160X
DOI: 10.1002/aelm.201901171