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3C-SiC Hetero-epitaxiALLy grown on silicon compliancE substrates and 3C-SiC substrates for sustaiNable wide-band-Gap powEr devices

Livrables

D6.10

Second Training activities report

D6.4

Report on specific market needs

D6.11

Final Training activities report

D6.8

CHALLENGE-project webpage

Publications

1300°C Annealing of 1×10<sup>20</sup> Al<sup>+</sup> Ion Implanted 3C-SiC

Auteurs: Roberta Nipoti, Maria Concetta Canino, Filippo Bonafè, Frank Torregrosa, Sylvain Monnoye, Hugues Mank, Marcin Zielinski
Publié dans: Materials Science Forum, 963, 2019, Page(s) 420-423, ISSN 1662-9752
Éditeur: Scientific.net
DOI: 10.4028/www.scientific.net/msf.963.420

Epitaxial Graphene Growth on the Step‐Structured Surface of Off‐Axis C‐Face 3C‐SiC(1¯1¯1¯)

Auteurs: Yuchen Shi, Alexei A. Zakharov, Ivan Gueorguiev Ivanov, Gholamreza Yazdi, Mikael Syväjärvi, Rositsa Yakimova, Jianwu Sun
Publié dans: physica status solidi (b), 257/6, 2020, Page(s) 1900718, ISSN 0370-1972
Éditeur: John Wiley & Sons Ltd.
DOI: 10.1002/pssb.201900718

Molecular dynamics simulations of extended defects and their evolution in 3C–SiC by different potentials

Auteurs: Andrey Sarikov, Anna Marzegalli, Luca Barbisan, Emilio Scalise, Francesco Montalenti, Leo Miglio
Publié dans: Modelling and Simulation in Materials Science and Engineering, 28/1, 2020, Page(s) 015002, ISSN 0965-0393
Éditeur: Institute of Physics Publishing
DOI: 10.1088/1361-651x/ab50c7

Status and Prospects of Cubic Silicon Carbide Power Electronics Device Technology

Auteurs: Fan Li, Fabrizio Roccaforte, Giuseppe Greco, Patrick Fiorenza, Francesco La Via, Amador Pérez-Tomas, Jonathan Evans, Craig Fisher, Finn Monaghan, Philip Mawby, Mike Jennings
Publié dans: Materials, 14/19, 2021, Page(s) 5831, ISSN 1996-1944
Éditeur: MDPI Open Access Publishing
DOI: 10.3390/ma14195831

Effect of Nitrogen and Aluminum Doping on 3C-SiC Heteroepitaxial Layers Grown on 4° Off-Axis Si (100)

Auteurs: Cristiano Calabretta, Viviana Scuderi, Ruggero Anzalone, Marco Mauceri, Danilo Crippa, Annalisa Cannizzaro, Simona Boninelli, Francesco La Via
Publié dans: Materials, 14/16, 2021, Page(s) 4400, ISSN 1996-1944
Éditeur: MDPI Open Access Publishing
DOI: 10.3390/ma14164400

Nature and Shape of Stacking Faults in 3C‐SiC by Molecular Dynamics Simulations

Auteurs: Luca Barbisan, Andrey Sarikov, Anna Marzegalli, Francesco Montalenti, Leo Miglio
Publié dans: physica status solidi (b), 2021, Page(s) 2000598, ISSN 0370-1972
Éditeur: John Wiley & Sons Ltd.
DOI: 10.1002/pssb.202000598

New Approaches and Understandings in the Growth of Cubic Silicon Carbide

Auteurs: Francesco La Via, Massimo Zimbone, Corrado Bongiorno, Antonino La Magna, Giuseppe Fisicaro, Ioannis Deretzis, Viviana Scuderi, Cristiano Calabretta, Filippo Giannazzo, Marcin Zielinski, Ruggero Anzalone, Marco Mauceri, Danilo Crippa, Emilio Scalise, Anna Marzegalli, Andrey Sarikov, Leo Miglio, Valdas Jokubavicius, Mikael Syväjärvi, Rositsa Yakimova, Philipp Schuh, Michael Schöler, Manuel Kollmu
Publié dans: Materials, 14/18, 2021, Page(s) 5348, ISSN 1996-1944
Éditeur: MDPI Open Access Publishing
DOI: 10.3390/ma14185348

Growth and Coalescence of 3C-SiC on Si(111) Micro-Pillars by a Phase-Field Approach

Auteurs: Marco Masullo, Roberto Bergamaschini, Marco Albani, Thomas Kreiliger, Marco Mauceri, Danilo Crippa, Francesco La Via, Francesco Montalenti, Hans von Känel, Leo Miglio
Publié dans: Materials, 12/19, 2019, Page(s) 3223, ISSN 1996-1944
Éditeur: MDPI Open Access Publishing
DOI: 10.3390/ma12193223

Solving the critical thermal bowing in 3C-SiC/Si(111) by a tilting Si pillar architecture

Auteurs: Marco Albani, Anna Marzegalli, Roberto Bergamaschini, Marco Mauceri, Danilo Crippa, Francesco La Via, Hans von Känel, Leo Miglio
Publié dans: Journal of Applied Physics, 123/18, 2018, Page(s) 185703, ISSN 0021-8979
Éditeur: American Institute of Physics
DOI: 10.1063/1.5019325

From thin film to bulk 3C-SiC growth: Understanding the mechanism of defects reduction

Auteurs: F. La Via, A. Severino, R. Anzalone, C. Bongiorno, G. Litrico, M. Mauceri, M. Schoeler, P. Schuh, P. Wellmann
Publié dans: Materials Science in Semiconductor Processing, 78, 2018, Page(s) 57-68, ISSN 1369-8001
Éditeur: Pergamon Press
DOI: 10.1016/j.mssp.2017.12.012

Protrusions reduction in 3C-SiC thin film on Si

Auteurs: Massimo Zimbone, Marco Mauceri, Grazia Litrico, Eric Gasparo Barbagiovanni, Corrado Bongiorno, Francesco La Via
Publié dans: Journal of Crystal Growth, 498, 2018, Page(s) 248-257, ISSN 0022-0248
Éditeur: Elsevier BV
DOI: 10.1016/j.jcrysgro.2018.06.003

Power Electronic Semiconductor Materials for Automotive and Energy Saving Applications - SiC, GaN, Ga 2 O 3 , and Diamond

Auteurs: Peter J. Wellmann
Publié dans: Zeitschrift für anorganische und allgemeine Chemie, 643/21, 2017, Page(s) 1312-1322, ISSN 0044-2313
Éditeur: Wiley - V C H Verlag GmbbH & Co.
DOI: 10.1002/zaac.201700270

Growing bulk-like 3C-SiC from seeding material produced by CVD

Auteurs: P. Schuh, M. Arzig, G. Litrico, F. La Via, M. Mauceri, P. J. Wellmann
Publié dans: physica status solidi (a), 214/4, 2017, Page(s) 1600429, ISSN 1862-6300
Éditeur: Wiley - V C H Verlag GmbbH & Co.
DOI: 10.1002/pssa.201600429

Characterization of protrusions and stacking faults in 3C-SiC grown by sublimation epitaxy using 3C-SiC-on-Si seeding layers

Auteurs: Michael Schoeler, Philipp Schuh, Grazia Litrico, Francesco La Via, Marco Mauceri, Peter J. Wellmann
Publié dans: Advanced Materials Proceedings, 2/12, 2017, Page(s) 774-778, ISSN 2002-4428
Éditeur: VBRI Press
DOI: 10.5185/amp.2017/419

Sublimation growth of bulk 3C-SiC using 3C-SiC-on-Si (1 0 0) seeding layers

Auteurs: P. Schuh, M. Schöler, M. Wilhelm, M. Syväjärvi, G. Litrico, F. La Via, M. Mauceri, P.J. Wellmann
Publié dans: Journal of Crystal Growth, 478, 2017, Page(s) 159-162, ISSN 0022-0248
Éditeur: Elsevier BV
DOI: 10.1016/j.jcrysgro.2017.09.002

3C-SiC Growth on Inverted Silicon Pyramids Patterned Substrate

Auteurs: Massimo Zimbone, Marcin Zielinski, Corrado Bongiorno, Cristiano Calabretta, Ruggero Anzalone, Silvia Scalese, Giuseppe Fisicaro, Antonino La Magna, Fulvio Mancarella, Francesco La Via
Publié dans: Materials, 12/20, 2019, Page(s) 3407, ISSN 1996-1944
Éditeur: MDPI Open Access Publishing
DOI: 10.3390/ma12203407

Temperature Investigation on 3C-SiC Homo-Epitaxy on Four-Inch Wafers

Auteurs: Anzalone, Zimbone, Calabretta, Mauceri, Alberti, Reitano, La Via
Publié dans: Materials, 12/20, 2019, Page(s) 3293, ISSN 1996-1944
Éditeur: MDPI Open Access Publishing
DOI: 10.3390/ma12203293

Growth, Defects and Doping of 3C-SiC on Hexagonal Polytypes

Auteurs: Rositsa Yakimova, Ivan G. Ivanov, Lasse Vines, Margareta K. Linnarsson, Andreas Gällström, Filippo Giannazzo, Fabrizio Roccaforte, Peter Wellmann, Mikael Syväjärvi, Valdas Jokubavicius
Publié dans: ECS Journal of Solid State Science and Technology, 6/10, 2017, Page(s) P741-P745, ISSN 2162-8769
Éditeur: Electrochemical Society, Inc.
DOI: 10.1149/2.0281710jss

Sublimation growth of bulk 3C-SiC using 3C-SiC-on-Si (1 0 0) seeding layers

Auteurs: P. Schuh, M. Schöler, M. Wilhelm, M. Syväjärvi, G. Litrico, F. La Via, M. Mauceri, P.J. Wellmann
Publié dans: Journal of Crystal Growth, 478, 2017, Page(s) 159-162, ISSN 0022-0248
Éditeur: Elsevier BV
DOI: 10.1016/j.jcrysgro.2017.09.002

Simulation of the Growth Kinetics in Group IV Compound Semiconductors

Auteurs: Antonino La Magna, Alessandra Alberti, Erik Barbagiovanni, Corrado Bongiorno, Michele Cascio, Ioannis Deretzis, Francesco La Via, Emanuele Smecca
Publié dans: physica status solidi (a), 216/10, 2018, Page(s) 1800597, ISSN 1862-6300
Éditeur: Wiley - V C H Verlag GmbbH & Co.
DOI: 10.1002/pssa.201800597

3C-SiС Hetero-Epitaxially Grown on Silicon Compliance Substrates and New 3C-SiС Substrates for Sustainable Wide-Band-Gap Power Devices (CHALLENGE)

Auteurs: Francesco La Via, Fabrizio Roccaforte, Antonino La Magna, Roberta Nipoti, Fulvio Mancarella, Peter Wellman, Danilo Crippa, Marco Mauceri, Peter Ward, Leo Miglio, Marcin Zielinski, Adolf Schöner, Ahmed Nejim, Laura Vivani, Rositza Yakimova, Mikael Syväjärvi, Gregory Grosset, Frank Torregrosa, Michael Jennings, Philip A. Mawby, Ruggero Anzalone, Salvatore Coffa, Hiroyuki Nagasawa
Publié dans: Materials Science Forum, 924, 2018, Page(s) 913-918, ISSN 1662-9752
Éditeur: Trans Tech Publications Inc.
DOI: 10.4028/www.scientific.net/msf.924.913

Stacking Faults Defects on 3C-SiC Homo-Epitaxial Films

Auteurs: Grazia Litrico, Ruggero Anzalone, Alessandra Alberti, Corrado Bongiorno, Giuseppe Nicotra, Massimo Zimbone, Marco Mauceri, Salvatore Coffa, Francesco La Via
Publié dans: Materials Science Forum, 924, 2018, Page(s) 124-127, ISSN 1662-9752
Éditeur: Trans Tech Publications Ltd
DOI: 10.4028/www.scientific.net/msf.924.124

Elimination of step bunching in the growth of large-area monolayer and multilayer graphene on off-axis 3C SiC (111)

Auteurs: Yuchen Shi, Alexei A. Zakharov, Ivan G. Ivanov, G. Reza Yazdi, Valdas Jokubavicius, Mikael Syväjärvi, Rositsa Yakimova, Jianwu Sun
Publié dans: Carbon, 140, 2018, Page(s) 533-542, ISSN 0008-6223
Éditeur: Pergamon Press Ltd.
DOI: 10.1016/j.carbon.2018.08.042

A comparative study of high-quality C-face and Si-face 3C-SiC(1 1 1) grown on off-oriented 4H-SiC substrates

Auteurs: Yuchen Shi, Valdas Jokubavicius, Pontus Höjer, Ivan G Ivanov, G Reza Yazdi, Rositsa Yakimova, Mikael Syväjärvi, Jianwu Sun
Publié dans: Journal of Physics D: Applied Physics, 52/34, 2019, Page(s) 345103, ISSN 0022-3727
Éditeur: Institute of Physics Publishing
DOI: 10.1088/1361-6463/ab2859

A nanostructured NiO/cubic SiC p–n heterojunction photoanode for enhanced solar water splitting

Auteurs: Jingxin Jian, Yuchen Shi, Sebastian Ekeroth, Julien Keraudy, Mikael Syväjärvi, Rositsa Yakimova, Ulf Helmersson, Jianwu Sun
Publié dans: Journal of Materials Chemistry A, 7/9, 2019, Page(s) 4721-4728, ISSN 2050-7488
Éditeur: Royal Society of Chemistry
DOI: 10.1039/c9ta00020h

3C-SiC grown on Si by using a Si1-xGex buffer layer

Auteurs: M. Zimbone, M. Zielinski, E.G. Barbagiovanni, C. Calabretta, F. La Via
Publié dans: Journal of Crystal Growth, 519, 2019, Page(s) 1-6, ISSN 0022-0248
Éditeur: Elsevier BV
DOI: 10.1016/j.jcrysgro.2019.03.029

Intentional Incorporation and Tailoring of Point Defects during Sublimation Growth of Cubic Silicon Carbide by Variation of Process Parameters

Auteurs: Michael Schöler, Maximilian W. Lederer, Philipp Schuh, Peter J. Wellmann
Publié dans: physica status solidi (b), 257/1, 2019, Page(s) 1900286, ISSN 0370-1972
Éditeur: John Wiley & Sons Ltd.
DOI: 10.1002/pssb.201900286

1300°C Annealing of 1 × 10 20  cm −3 Al + Ion Implanted 3C-SiC/Si

Auteurs: Roberta Nipoti, Mariaconcetta Canino, Marcin Zielinski, Frank Torregrosa, Alberto Carnera
Publié dans: ECS Journal of Solid State Science and Technology, 8/9, 2019, Page(s) P480-P487, ISSN 2162-8769
Éditeur: Electrochemical Society, Inc.
DOI: 10.1149/2.0121909jss

Growth of Large-Area, Stress-Free, and Bulk-Like 3C-SiC (100) Using 3C-SiC-on-Si in Vapor Phase Growth

Auteurs: Schuh, la Via, Mauceri, Zielinski, Wellmann
Publié dans: Materials, 12/13, 2019, Page(s) 2179, ISSN 1996-1944
Éditeur: MDPI Open Access Publishing
DOI: 10.3390/ma12132179

Limitations during Vapor Phase Growth of Bulk (100) 3C-SiC Using 3C-SiC-on-SiC Seeding Stacks

Auteurs: Philipp Schuh, Johannes Steiner, Francesco La Via, Marco Mauceri, Marcin Zielinski, Peter J. Wellmann
Publié dans: Materials, 12/15, 2019, Page(s) 2353, ISSN 1996-1944
Éditeur: MDPI Open Access Publishing
DOI: 10.3390/ma12152353

Impact of Stacking Faults and Domain Boundaries on the Electronic Transport in Cubic Silicon Carbide Probed by Conductive Atomic Force Microscopy

Auteurs: Filippo Giannazzo, Giuseppe Greco, Salvatore Di Franco, Patrick Fiorenza, Ioannis Deretzis, Antonino La Magna, Corrado Bongiorno, Massimo Zimbone, Francesco La Via, Marcin Zielinski, Fabrizio Roccaforte
Publié dans: Advanced Electronic Materials, 2020, Page(s) 1901171, ISSN 2199-160X
Éditeur: Wiley
DOI: 10.1002/aelm.201901171

Structure and Stability of Partial Dislocation Complexes in 3C-SiC by Molecular Dynamics Simulations

Auteurs: Andrey Sarikov, Anna Marzegalli, Luca Barbisan, Francesco Montalenti, Leo Miglio
Publié dans: Materials, 12/18, 2019, Page(s) 3027, ISSN 1996-1944
Éditeur: MDPI Open Access Publishing
DOI: 10.3390/ma12183027

Mechanism of stacking fault annihilation in 3C-SiC epitaxially grown on Si(001) by molecular dynamics simulations

Auteurs: Andrey Sarikov, Anna Marzegalli, Luca Barbisan, Massimo Zimbone, Corrado Bongiorno, Marco Mauceri, Danilo Crippa, Francesco La Via, Leo Miglio
Publié dans: CrystEngComm, 23/7, 2021, Page(s) 1566-1571, ISSN 1466-8033
Éditeur: Royal Society of Chemistry
DOI: 10.1039/d0ce01613f

Ohmic contacts on n-type and p-type cubic silicon carbide (3C-SiC) grown on silicon

Auteurs: M. Spera, G. Greco, R. Lo Nigro, C. Bongiorno, F. Giannazzo, M. Zielinski, F. La Via, F. Roccaforte
Publié dans: Materials Science in Semiconductor Processing, 93, 2019, Page(s) 295-298, ISSN 1369-8001
Éditeur: Pergamon Press
DOI: 10.1016/j.mssp.2019.01.015

The origin and nature of killer defects in 3C-SiC for power electronic applications by a multiscale atomistic approach

Auteurs: Emilio Scalise, Luca Barbisan, Andrey Sarikov, Francesco Montalenti, Leo Miglio, Anna Marzegalli
Publié dans: Journal of Materials Chemistry C, 8/25, 2020, Page(s) 8380-8392, ISSN 2050-7534
Éditeur: Royal Society of Chemistry
DOI: 10.1039/d0tc00909a

Annealing-Induced Changes in the Nature of Point Defects in Sublimation-Grown Cubic Silicon Carbide

Auteurs: Michael Schöler, Clemens Brecht, Peter J. Wellmann
Publié dans: Materials, 12/15, 2019, Page(s) 2487, ISSN 1996-1944
Éditeur: MDPI Open Access Publishing
DOI: 10.3390/ma12152487

Characterization of 4H- and 6H-Like Stacking Faults in Cross Section of 3C-SiC Epitaxial Layer by Room-Temperature μ-Photoluminescence and μ-Raman Analysis

Auteurs: Viviana Scuderi, Cristiano Calabretta, Ruggero Anzalone, Marco Mauceri, Francesco La Via
Publié dans: Materials, 13/8, 2020, Page(s) 1837, ISSN 1996-1944
Éditeur: MDPI Open Access Publishing
DOI: 10.3390/ma13081837

Temperature-Dependent Stability of Polytypes and Stacking Faults in Si C : Reconciling Theory and Experiments

Auteurs: Emilio Scalise, Anna Marzegalli, Francesco Montalenti, Leo Miglio
Publié dans: Physical Review Applied, 12/2, 2019, ISSN 2331-7019
Éditeur: APS Physics
DOI: 10.1103/physrevapplied.12.021002