Livrables Documents, reports (3) D6.10 Second Training activities report D6.4 Report on specific market needs D6.11 Final Training activities report Other (1) D6.8 CHALLENGE-project webpage Publications Peer reviewed articles (38) 1300°C Annealing of 1×10<sup>20</sup> Al<sup>+</sup> Ion Implanted 3C-SiC Auteurs: Roberta Nipoti, Maria Concetta Canino, Filippo Bonafè, Frank Torregrosa, Sylvain Monnoye, Hugues Mank, Marcin Zielinski Publié dans: Materials Science Forum, Issue 963, 2019, Page(s) 420-423, ISSN 1662-9752 Éditeur: Scientific.net DOI: 10.4028/www.scientific.net/msf.963.420 Epitaxial Graphene Growth on the Step‐Structured Surface of Off‐Axis C‐Face 3C‐SiC(1¯1¯1¯) Auteurs: Yuchen Shi, Alexei A. Zakharov, Ivan Gueorguiev Ivanov, Gholamreza Yazdi, Mikael Syväjärvi, Rositsa Yakimova, Jianwu Sun Publié dans: physica status solidi (b), Issue 257/6, 2020, Page(s) 1900718, ISSN 0370-1972 Éditeur: John Wiley & Sons Ltd. DOI: 10.1002/pssb.201900718 Molecular dynamics simulations of extended defects and their evolution in 3C–SiC by different potentials Auteurs: Andrey Sarikov, Anna Marzegalli, Luca Barbisan, Emilio Scalise, Francesco Montalenti, Leo Miglio Publié dans: Modelling and Simulation in Materials Science and Engineering, Issue 28/1, 2020, Page(s) 015002, ISSN 0965-0393 Éditeur: Institute of Physics Publishing DOI: 10.1088/1361-651x/ab50c7 Status and Prospects of Cubic Silicon Carbide Power Electronics Device Technology Auteurs: Fan Li, Fabrizio Roccaforte, Giuseppe Greco, Patrick Fiorenza, Francesco La Via, Amador Pérez-Tomas, Jonathan Evans, Craig Fisher, Finn Monaghan, Philip Mawby, Mike Jennings Publié dans: Materials, Issue 14/19, 2021, Page(s) 5831, ISSN 1996-1944 Éditeur: MDPI Open Access Publishing DOI: 10.3390/ma14195831 Effect of Nitrogen and Aluminum Doping on 3C-SiC Heteroepitaxial Layers Grown on 4° Off-Axis Si (100) Auteurs: Cristiano Calabretta, Viviana Scuderi, Ruggero Anzalone, Marco Mauceri, Danilo Crippa, Annalisa Cannizzaro, Simona Boninelli, Francesco La Via Publié dans: Materials, Issue 14/16, 2021, Page(s) 4400, ISSN 1996-1944 Éditeur: MDPI Open Access Publishing DOI: 10.3390/ma14164400 Nature and Shape of Stacking Faults in 3C‐SiC by Molecular Dynamics Simulations Auteurs: Luca Barbisan, Andrey Sarikov, Anna Marzegalli, Francesco Montalenti, Leo Miglio Publié dans: physica status solidi (b), 2021, Page(s) 2000598, ISSN 0370-1972 Éditeur: John Wiley & Sons Ltd. DOI: 10.1002/pssb.202000598 New Approaches and Understandings in the Growth of Cubic Silicon Carbide Auteurs: Francesco La Via, Massimo Zimbone, Corrado Bongiorno, Antonino La Magna, Giuseppe Fisicaro, Ioannis Deretzis, Viviana Scuderi, Cristiano Calabretta, Filippo Giannazzo, Marcin Zielinski, Ruggero Anzalone, Marco Mauceri, Danilo Crippa, Emilio Scalise, Anna Marzegalli, Andrey Sarikov, Leo Miglio, Valdas Jokubavicius, Mikael Syväjärvi, Rositsa Yakimova, Philipp Schuh, Michael Schöler, Manuel Kollmu Publié dans: Materials, Issue 14/18, 2021, Page(s) 5348, ISSN 1996-1944 Éditeur: MDPI Open Access Publishing DOI: 10.3390/ma14185348 Growth and Coalescence of 3C-SiC on Si(111) Micro-Pillars by a Phase-Field Approach Auteurs: Marco Masullo, Roberto Bergamaschini, Marco Albani, Thomas Kreiliger, Marco Mauceri, Danilo Crippa, Francesco La Via, Francesco Montalenti, Hans von Känel, Leo Miglio Publié dans: Materials, Issue 12/19, 2019, Page(s) 3223, ISSN 1996-1944 Éditeur: MDPI Open Access Publishing DOI: 10.3390/ma12193223 Solving the critical thermal bowing in 3C-SiC/Si(111) by a tilting Si pillar architecture Auteurs: Marco Albani, Anna Marzegalli, Roberto Bergamaschini, Marco Mauceri, Danilo Crippa, Francesco La Via, Hans von Känel, Leo Miglio Publié dans: Journal of Applied Physics, Issue 123/18, 2018, Page(s) 185703, ISSN 0021-8979 Éditeur: American Institute of Physics DOI: 10.1063/1.5019325 From thin film to bulk 3C-SiC growth: Understanding the mechanism of defects reduction Auteurs: F. La Via, A. Severino, R. Anzalone, C. Bongiorno, G. Litrico, M. Mauceri, M. Schoeler, P. Schuh, P. Wellmann Publié dans: Materials Science in Semiconductor Processing, Issue 78, 2018, Page(s) 57-68, ISSN 1369-8001 Éditeur: Pergamon Press DOI: 10.1016/j.mssp.2017.12.012 Protrusions reduction in 3C-SiC thin film on Si Auteurs: Massimo Zimbone, Marco Mauceri, Grazia Litrico, Eric Gasparo Barbagiovanni, Corrado Bongiorno, Francesco La Via Publié dans: Journal of Crystal Growth, Issue 498, 2018, Page(s) 248-257, ISSN 0022-0248 Éditeur: Elsevier BV DOI: 10.1016/j.jcrysgro.2018.06.003 Power Electronic Semiconductor Materials for Automotive and Energy Saving Applications - SiC, GaN, Ga 2 O 3 , and Diamond Auteurs: Peter J. Wellmann Publié dans: Zeitschrift für anorganische und allgemeine Chemie, Issue 643/21, 2017, Page(s) 1312-1322, ISSN 0044-2313 Éditeur: Wiley - V C H Verlag GmbbH & Co. DOI: 10.1002/zaac.201700270 Growing bulk-like 3C-SiC from seeding material produced by CVD Auteurs: P. Schuh, M. Arzig, G. Litrico, F. La Via, M. Mauceri, P. J. Wellmann Publié dans: physica status solidi (a), Issue 214/4, 2017, Page(s) 1600429, ISSN 1862-6300 Éditeur: Wiley - V C H Verlag GmbbH & Co. DOI: 10.1002/pssa.201600429 Characterization of protrusions and stacking faults in 3C-SiC grown by sublimation epitaxy using 3C-SiC-on-Si seeding layers Auteurs: Michael Schoeler, Philipp Schuh, Grazia Litrico, Francesco La Via, Marco Mauceri, Peter J. Wellmann Publié dans: Advanced Materials Proceedings, Issue 2/12, 2017, Page(s) 774-778, ISSN 2002-4428 Éditeur: VBRI Press DOI: 10.5185/amp.2017/419 Sublimation growth of bulk 3C-SiC using 3C-SiC-on-Si (1 0 0) seeding layers Auteurs: P. Schuh, M. Schöler, M. Wilhelm, M. Syväjärvi, G. Litrico, F. La Via, M. Mauceri, P.J. Wellmann Publié dans: Journal of Crystal Growth, Issue 478, 2017, Page(s) 159-162, ISSN 0022-0248 Éditeur: Elsevier BV DOI: 10.1016/j.jcrysgro.2017.09.002 3C-SiC Growth on Inverted Silicon Pyramids Patterned Substrate Auteurs: Massimo Zimbone, Marcin Zielinski, Corrado Bongiorno, Cristiano Calabretta, Ruggero Anzalone, Silvia Scalese, Giuseppe Fisicaro, Antonino La Magna, Fulvio Mancarella, Francesco La Via Publié dans: Materials, Issue 12/20, 2019, Page(s) 3407, ISSN 1996-1944 Éditeur: MDPI Open Access Publishing DOI: 10.3390/ma12203407 Temperature Investigation on 3C-SiC Homo-Epitaxy on Four-Inch Wafers Auteurs: Anzalone, Zimbone, Calabretta, Mauceri, Alberti, Reitano, La Via Publié dans: Materials, Issue 12/20, 2019, Page(s) 3293, ISSN 1996-1944 Éditeur: MDPI Open Access Publishing DOI: 10.3390/ma12203293 Growth, Defects and Doping of 3C-SiC on Hexagonal Polytypes Auteurs: Rositsa Yakimova, Ivan G. Ivanov, Lasse Vines, Margareta K. Linnarsson, Andreas Gällström, Filippo Giannazzo, Fabrizio Roccaforte, Peter Wellmann, Mikael Syväjärvi, Valdas Jokubavicius Publié dans: ECS Journal of Solid State Science and Technology, Issue 6/10, 2017, Page(s) P741-P745, ISSN 2162-8769 Éditeur: Electrochemical Society, Inc. DOI: 10.1149/2.0281710jss Sublimation growth of bulk 3C-SiC using 3C-SiC-on-Si (1 0 0) seeding layers Auteurs: P. Schuh, M. Schöler, M. Wilhelm, M. Syväjärvi, G. Litrico, F. La Via, M. Mauceri, P.J. Wellmann Publié dans: Journal of Crystal Growth, Issue 478, 2017, Page(s) 159-162, ISSN 0022-0248 Éditeur: Elsevier BV DOI: 10.1016/j.jcrysgro.2017.09.002 Simulation of the Growth Kinetics in Group IV Compound Semiconductors Auteurs: Antonino La Magna, Alessandra Alberti, Erik Barbagiovanni, Corrado Bongiorno, Michele Cascio, Ioannis Deretzis, Francesco La Via, Emanuele Smecca Publié dans: physica status solidi (a), Issue 216/10, 2018, Page(s) 1800597, ISSN 1862-6300 Éditeur: Wiley - V C H Verlag GmbbH & Co. DOI: 10.1002/pssa.201800597 3C-SiС Hetero-Epitaxially Grown on Silicon Compliance Substrates and New 3C-SiС Substrates for Sustainable Wide-Band-Gap Power Devices (CHALLENGE) Auteurs: Francesco La Via, Fabrizio Roccaforte, Antonino La Magna, Roberta Nipoti, Fulvio Mancarella, Peter Wellman, Danilo Crippa, Marco Mauceri, Peter Ward, Leo Miglio, Marcin Zielinski, Adolf Schöner, Ahmed Nejim, Laura Vivani, Rositza Yakimova, Mikael Syväjärvi, Gregory Grosset, Frank Torregrosa, Michael Jennings, Philip A. Mawby, Ruggero Anzalone, Salvatore Coffa, Hiroyuki Nagasawa Publié dans: Materials Science Forum, Issue 924, 2018, Page(s) 913-918, ISSN 1662-9752 Éditeur: Trans Tech Publications Inc. DOI: 10.4028/www.scientific.net/msf.924.913 Stacking Faults Defects on 3C-SiC Homo-Epitaxial Films Auteurs: Grazia Litrico, Ruggero Anzalone, Alessandra Alberti, Corrado Bongiorno, Giuseppe Nicotra, Massimo Zimbone, Marco Mauceri, Salvatore Coffa, Francesco La Via Publié dans: Materials Science Forum, Issue 924, 2018, Page(s) 124-127, ISSN 1662-9752 Éditeur: Trans Tech Publications Ltd DOI: 10.4028/www.scientific.net/msf.924.124 Elimination of step bunching in the growth of large-area monolayer and multilayer graphene on off-axis 3C SiC (111) Auteurs: Yuchen Shi, Alexei A. Zakharov, Ivan G. Ivanov, G. Reza Yazdi, Valdas Jokubavicius, Mikael Syväjärvi, Rositsa Yakimova, Jianwu Sun Publié dans: Carbon, Issue 140, 2018, Page(s) 533-542, ISSN 0008-6223 Éditeur: Pergamon Press Ltd. DOI: 10.1016/j.carbon.2018.08.042 A comparative study of high-quality C-face and Si-face 3C-SiC(1 1 1) grown on off-oriented 4H-SiC substrates Auteurs: Yuchen Shi, Valdas Jokubavicius, Pontus Höjer, Ivan G Ivanov, G Reza Yazdi, Rositsa Yakimova, Mikael Syväjärvi, Jianwu Sun Publié dans: Journal of Physics D: Applied Physics, Issue 52/34, 2019, Page(s) 345103, ISSN 0022-3727 Éditeur: Institute of Physics Publishing DOI: 10.1088/1361-6463/ab2859 A nanostructured NiO/cubic SiC p–n heterojunction photoanode for enhanced solar water splitting Auteurs: Jingxin Jian, Yuchen Shi, Sebastian Ekeroth, Julien Keraudy, Mikael Syväjärvi, Rositsa Yakimova, Ulf Helmersson, Jianwu Sun Publié dans: Journal of Materials Chemistry A, Issue 7/9, 2019, Page(s) 4721-4728, ISSN 2050-7488 Éditeur: Royal Society of Chemistry DOI: 10.1039/c9ta00020h 3C-SiC grown on Si by using a Si1-xGex buffer layer Auteurs: M. Zimbone, M. Zielinski, E.G. Barbagiovanni, C. Calabretta, F. La Via Publié dans: Journal of Crystal Growth, Issue 519, 2019, Page(s) 1-6, ISSN 0022-0248 Éditeur: Elsevier BV DOI: 10.1016/j.jcrysgro.2019.03.029 Intentional Incorporation and Tailoring of Point Defects during Sublimation Growth of Cubic Silicon Carbide by Variation of Process Parameters Auteurs: Michael Schöler, Maximilian W. Lederer, Philipp Schuh, Peter J. Wellmann Publié dans: physica status solidi (b), Issue 257/1, 2019, Page(s) 1900286, ISSN 0370-1972 Éditeur: John Wiley & Sons Ltd. DOI: 10.1002/pssb.201900286 1300°C Annealing of 1 × 10 20 cm −3 Al + Ion Implanted 3C-SiC/Si Auteurs: Roberta Nipoti, Mariaconcetta Canino, Marcin Zielinski, Frank Torregrosa, Alberto Carnera Publié dans: ECS Journal of Solid State Science and Technology, Issue 8/9, 2019, Page(s) P480-P487, ISSN 2162-8769 Éditeur: Electrochemical Society, Inc. DOI: 10.1149/2.0121909jss Growth of Large-Area, Stress-Free, and Bulk-Like 3C-SiC (100) Using 3C-SiC-on-Si in Vapor Phase Growth Auteurs: Schuh, la Via, Mauceri, Zielinski, Wellmann Publié dans: Materials, Issue 12/13, 2019, Page(s) 2179, ISSN 1996-1944 Éditeur: MDPI Open Access Publishing DOI: 10.3390/ma12132179 Limitations during Vapor Phase Growth of Bulk (100) 3C-SiC Using 3C-SiC-on-SiC Seeding Stacks Auteurs: Philipp Schuh, Johannes Steiner, Francesco La Via, Marco Mauceri, Marcin Zielinski, Peter J. Wellmann Publié dans: Materials, Issue 12/15, 2019, Page(s) 2353, ISSN 1996-1944 Éditeur: MDPI Open Access Publishing DOI: 10.3390/ma12152353 Impact of Stacking Faults and Domain Boundaries on the Electronic Transport in Cubic Silicon Carbide Probed by Conductive Atomic Force Microscopy Auteurs: Filippo Giannazzo, Giuseppe Greco, Salvatore Di Franco, Patrick Fiorenza, Ioannis Deretzis, Antonino La Magna, Corrado Bongiorno, Massimo Zimbone, Francesco La Via, Marcin Zielinski, Fabrizio Roccaforte Publié dans: Advanced Electronic Materials, 2020, Page(s) 1901171, ISSN 2199-160X Éditeur: Wiley DOI: 10.1002/aelm.201901171 Structure and Stability of Partial Dislocation Complexes in 3C-SiC by Molecular Dynamics Simulations Auteurs: Andrey Sarikov, Anna Marzegalli, Luca Barbisan, Francesco Montalenti, Leo Miglio Publié dans: Materials, Issue 12/18, 2019, Page(s) 3027, ISSN 1996-1944 Éditeur: MDPI Open Access Publishing DOI: 10.3390/ma12183027 Mechanism of stacking fault annihilation in 3C-SiC epitaxially grown on Si(001) by molecular dynamics simulations Auteurs: Andrey Sarikov, Anna Marzegalli, Luca Barbisan, Massimo Zimbone, Corrado Bongiorno, Marco Mauceri, Danilo Crippa, Francesco La Via, Leo Miglio Publié dans: CrystEngComm, Issue 23/7, 2021, Page(s) 1566-1571, ISSN 1466-8033 Éditeur: Royal Society of Chemistry DOI: 10.1039/d0ce01613f Ohmic contacts on n-type and p-type cubic silicon carbide (3C-SiC) grown on silicon Auteurs: M. Spera, G. Greco, R. Lo Nigro, C. Bongiorno, F. Giannazzo, M. Zielinski, F. La Via, F. Roccaforte Publié dans: Materials Science in Semiconductor Processing, Issue 93, 2019, Page(s) 295-298, ISSN 1369-8001 Éditeur: Pergamon Press DOI: 10.1016/j.mssp.2019.01.015 The origin and nature of killer defects in 3C-SiC for power electronic applications by a multiscale atomistic approach Auteurs: Emilio Scalise, Luca Barbisan, Andrey Sarikov, Francesco Montalenti, Leo Miglio, Anna Marzegalli Publié dans: Journal of Materials Chemistry C, Issue 8/25, 2020, Page(s) 8380-8392, ISSN 2050-7534 Éditeur: Royal Society of Chemistry DOI: 10.1039/d0tc00909a Annealing-Induced Changes in the Nature of Point Defects in Sublimation-Grown Cubic Silicon Carbide Auteurs: Michael Schöler, Clemens Brecht, Peter J. Wellmann Publié dans: Materials, Issue 12/15, 2019, Page(s) 2487, ISSN 1996-1944 Éditeur: MDPI Open Access Publishing DOI: 10.3390/ma12152487 Characterization of 4H- and 6H-Like Stacking Faults in Cross Section of 3C-SiC Epitaxial Layer by Room-Temperature μ-Photoluminescence and μ-Raman Analysis Auteurs: Viviana Scuderi, Cristiano Calabretta, Ruggero Anzalone, Marco Mauceri, Francesco La Via Publié dans: Materials, Issue 13/8, 2020, Page(s) 1837, ISSN 1996-1944 Éditeur: MDPI Open Access Publishing DOI: 10.3390/ma13081837 Temperature-Dependent Stability of Polytypes and Stacking Faults in Si C : Reconciling Theory and Experiments Auteurs: Emilio Scalise, Anna Marzegalli, Francesco Montalenti, Leo Miglio Publié dans: Physical Review Applied, Issue 12/2, 2019, ISSN 2331-7019 Éditeur: APS Physics DOI: 10.1103/physrevapplied.12.021002 Recherche de données OpenAIRE... Une erreur s’est produite lors de la recherche de données OpenAIRE Aucun résultat disponible
