Monolithic cointegration of QD-based InP on SiN as a versatile platform for the demonstration of high performance and low cost PIC transmitters

Publications

Conference proceedings (14)

Si-rich nitride waveguides for the formation of back-end-of-line interfaces with III-V optical sources on silicon

Author(s): Dimitra Ketzaki, Dimitrios Chatzitheocharis, Cosimo Calò, Christophe Caillaud, Alexandre Delga, Konstantinos Vyrsokinos
Published in: Integrated Optics: Devices, Materials, and Technologies XXIII, 2019, Page(s) 39
DOI: 10.1117/12.2509261

Low-loss coupling interfaces between InP-based emitters and Si3N4 photonic integrated circuits

Author(s): Dimitrios Chatzitheocharis, Dimitra Ketzaki, George Dabos, Konstantinos Vyrsokinos
Published in: Silicon Photonics XIV, 2019, Page(s) 52
DOI: 10.1117/12.2508517

MOICANA: monolithic cointegration of QD-based InP on SiN as a versatile platform for the demonstration of high-performance and low-cost PIC transmitters

Author(s): Konstantinos Vyrsokinos, Dimitrios Chatzitheocharis, Marios Papadovasilakis, Dimitra Ketzaki, Cosimo Calo, Cristophe Caillaud, Davide Sacchetto, Michael Zervas, Johann Peter Reithmaier, Vitalii Sichkovskyi, Gadi Eisenstein, Meir Orenstein, Benjamin Wohlfeil, Gilda Mehrpoor, Elad Mentovich, Dimitrios Kalavrouziotis, Marco A. Garcia, Alberto Hinojosa
Published in: Optical Interconnects XIX, 2019, Page(s) 35
DOI: 10.1117/12.2509401

Narrow Linewidth InAs/InP Quantum Dot DFB Laser

Author(s): Tali Septon, Sutapa Gosh, Annette Becker, Vitalii Sichkovskyi, Florian Schnabel, Anna Rippien, Johann Peter Reithmaier, Gadi Eisenstein
Published in: OFC 2019, 2019

1.5 μm Quantum Dot Lasers and Amplifiers

Author(s): Johann Peter Reithmaier, Gadi Eisenstein
Published in: 2018 IEEE International Semiconductor Laser Conference (ISLC), 2018, Page(s) 1-2
DOI: 10.1109/islc.2018.8516165

Quantum-dot devices for high-performance telecom applications (Conference Presentation)

Author(s): Johann Peter Reithmaier
Published in: Physics and Simulation of Optoelectronic Devices XXVII, 2019, Page(s) 6
DOI: 10.1117/12.2515448

Quantum Dot Materials for Optoelectronic Devices in the Telecom C-Band

Author(s): J.P. Reithmaier
Published in: Institute of Innovative Research (IIR) Symposium - Progress of Semiconductor Lasers and Photonic Devices/Systems, 2019

Nanostructured Materials and Devices for Optical Communication and Quantum Information Technologies

Author(s): J.P. Reithmaier
Published in: Physics Seminar of the Center for Advanced Materials and Nanotechnology, 2018

Impact of low-dimensional gain material on optoelectronic device properties

Author(s): J.P. Reithmaier
Published in: Conf. on Physics of Quantum Electronics (PQE), 2019

InP-based Quantum Dot Lasers for High Capacity Optical Links

Author(s): J.P. Reithmaier, G. Eisenstein
Published in: IEEE Topical Meeting 2019, 2019

Semiconductor Nanomaterials and Applications for Classical and Quantum Optical Communication

Author(s): J.P. Reithmaier
Published in: 6th Nano Israel Conference, 2018

1.5 μm Quantum Dot Lasers and Amplifiers with High Temperature Stability

Author(s): J. P Reithmaier, G. Eisenstein
Published in: European Semiconductor Laser Workshop 2018, 2018

InP-Based Quantum Dot Materials and Devices for Fibre-Based Optical Communication

Author(s): J.P. Reithmaier, G. Eisenstein
Published in: "E-MRS Spring meeting 2019, Symposium on ""Semiconductor Nanostructures towards Electronic and Opto-Electronic Device Applications – VII", 2019

Nanostructured Materials and Devices for Optical Communication and Quantum Information Technologies

Author(s): J.P. Reithmaier
Published in: Nano Symposium, 2018

Peer reviewed articles (1)

Large linewidth reduction in semiconductor lasers based on atom-like gain material

Author(s): Tali Septon, Annette Becker, Sutapa Gosh, Gal Shtendel, Vitalii Sichkovskyi, Florian Schnabel, Anna Sengül, Marko Bjelica, Bernd Witzigmann, Johann Peter Reithmaier, Gadi Eisenstein
Published in: Optica, Issue 6/8, 2019, Page(s) 1071, ISSN 2334-2536
DOI: 10.1364/optica.6.001071