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Enhancement of Memory- and Energy-related Properties of Fluorite Structured Ferroelectrics

Project description

Novel ferroelectric material enables more powerful memory and energy storage devices

Modern technology demands smaller, faster and more efficient memory and energy storage solutions. Offering benefits such as low power consumption and high speeds, traditional ferroelectric materials have long been valued for these applications yet cannot scale down to the nanoscale. Recently, doped HfO2 thin films have emerged as a promising alternative, a material that is lead-free and highly compatible with existing silicon-based technologies. With the support of the Marie Skłodowska-Curie Actions programme, the MEFF project will advance HfO2-based materials for memory and energy storage, focusing on improving endurance, controlling microstructure and enhancing reliability. The proposed research aims to uncover new ways to optimise HfO2-based films, paving the way for more powerful memory and energy storage technologies.

Objective

For several decades, ferroelectric (FE) materials (particularly lead-based perovskite materials) attained wide attention for memory (non-volatile) and energy storage applications. The FE memories offer low power consumption, high speed, and high endurance and retention. However, the conventional FE materials couldn't surpass the niche applications due to the difficulties in scaling the size below the ~100 nm node. Recently, FE properties have been reported in doped HfO2 polycrystalline thin films. HfO2-based FE materials have several advantages over conventional materials, such as lead-free, compatibility with existing Si technology and CMOS, ultrathin thickness (in the range of nm), and suitability for integration within 3D nanostructures. Therefore, fluorite-structured materials can be appropriate for miniaturized devices. These materials are extensively studied for memory and energy-related applications. However, progress is still needed, such as more control in the microstructure of the films (formed phases and defects), understanding of complex switching behavior (including wake-up, fatigue, and split-up), and improvement of device reliability. This project investigates HfO2-based epitaxial films as a model system for energy storage and memory applications. We will focus on the enhancement of endurance without retention degradation of memory devices. This project also aims to enhance the energy storage properties of HfO2-based films. Moreover, we will also use artificial intelligence to analyze the relatability of memory and energy devices.

Fields of science (EuroSciVoc)

Keywords

Programme(s)

Topic(s)

Funding Scheme

HORIZON-TMA-MSCA-PF-EF - HORIZON TMA MSCA Postdoctoral Fellowships - European Fellowships

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Call for proposal

(opens in new window) HORIZON-MSCA-2023-PF-01

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Coordinator

AGENCIA ESTATAL CONSEJO SUPERIOR DE INVESTIGACIONES CIENTIFICAS
Net EU contribution
€ 165 312,96
Address
CALLE SERRANO 117
28006 Madrid
Spain
Region
Comunidad de Madrid Comunidad de Madrid Madrid
Activity type
Research Organisations
Links
Total cost
No data