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Spintronics based on Ferroelectrics

Project description

Cutting-edge spin-based devices pave the way for low-energy computing

Spintronics uses electron spin, in addition to its charge, to process and store information. With the support of the Marie Skłodowska-Curie Actions programme, the SpinFerro project will investigate a device using the ferroelectric spin-orbit technology. This technology leverages spintronics to enable efficient, low-energy in-memory computing. This device works by controlling spin-polarised electron states through a ferroelectric material, which enables the spin to efficiently convert to charge currents. The proposed approach offers non-volatility, low operating voltage, and low energy consumption, making it a promising alternative to traditional CMOS technology. Researchers will be trained in advanced nanofabrication techniques and device characterisation. They will eventually create a working prototype that meets cutting-edge nanoelectronics standards.

Objective

Current state of the art technologies demand high density and high performance electronic devices with reduced energy consumption. This stretches the performance limits of Complementary Metal Oxide Semiconductor (CMOS) transistors technology. Among the many beyond CMOS approaches, one of the most promising routes is the spintronics ecosystem. In the framework of this project, we aim to investigate a beyond CMOS spintronics device recently proposed and called Ferroelectric Spin Orbit (FESO) device, where the spin polarized states of a Rashba interface are manipulated through its proximity with a ferroelectric material. The projects innovation relies on the exploitation of this effect to transform spin to charge currents in a controllable manner through the reversing a ferroelectrics polarization, to develop a new in memory computing technology. The FESO technology involves non-volatility, low operating voltage and much lower energy consumption compared to conventional CMOS and other spintronic devices. As a main scientific objective, the researcher will investigate and understand the effect of the ferroelectric layer to FESO devices performance in terms of materials choice, growth quality, dimensions and compatibility to Ferromagnetic materials. The main technological objective is to fabricate a prototype and characterize its operational performance with regards to cutting edge nanoelectronics standards. The results of the project and key performance of the FESO device will be tabulated in a roadmap. During this project the researcher will be trained in advanced Nanofabrication techniques and device characterization. Except from the research skills, the researcher will also gain experience in a series of transferable skills. This project constitutes a perfect opportunity to establish an independent scientific profile at the frontier of nanoelectronics and semiconductor industry, a key field in the framework of major European Commission initiatives.

Fields of science (EuroSciVoc)

Keywords

Programme(s)

Topic(s)

Funding Scheme

HORIZON-TMA-MSCA-PF-EF - HORIZON TMA MSCA Postdoctoral Fellowships - European Fellowships

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Call for proposal

(opens in new window) HORIZON-MSCA-2023-PF-01

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Coordinator

COMMISSARIAT A L ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
Net EU contribution
€ 211 754,88
Address
RUE LEBLANC 25
75015 Paris
France
Region
Ile-de-France Ile-de-France Paris
Activity type
Research Organisations
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Total cost
No data