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Contenido archivado el 2022-12-23

Multi-element trace analysis of high-purity substances by mass spectrometric methods (especially glow discharge mass spectrometry) and spatial characterization of materials with layered or microscopic structure

Objetivo



This research has a double goal. For the bulk trace analysis of high-purity materials it aims at a better understanding of flow discharge mass spectrometry in the participating laboratories. This is a technique of increasing importance for the very sensitive chemical and isotopic characterisation of materials, especially high-purity materials. The laboratory in Antwerp has had a commercial instrument since 1989, the laboratory in Jülich is building its own instrumentation (with the co-operation of a scientist from Novosibirsk), the laboratory of Chernogolovka also has plans to build its own instrument, and the laboratories of Moscow and St. Petersburg have been actively involved in theoretical work on glow discharge mass spectrometry and ion optics.

For spatially resolved analysis of materials with complex/layered structure, the western laboratories offer access to their high-resolution electron microscopes, the secondary ion mass spectrometer (ion microscopy/scanning microprobe mass analysis) and secondary neutral mass spectrometers.

The main objectives are: the theory of the multicomponent glow discharge plasma using Ar-H2 mixture as the working gas which will be developed; the analytical procedure for the quantitative analysis of InGaAsP/InP heterostructures by GDMS with the use of the mixtures mentioned, and the procedure of layer-by-layer analysis by SIMS which will be elaborated; the basic information on the heterostructures InGaAsP/InP with respect to the crystallochemical peculiarities, depth profiles for the main components as well as for dopants, and the lattice mismatch parameters obtained; and the growth conditions of the heterostructures mentioned which will be optimized (with the aim of reaching the almost ideal crystal structure), as well as the improvement of optoelectronic characteristics of devices based on the InGaAsP/InP structures obtained.

Convocatoria de propuestas

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Régimen de financiación

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Coordinador

Universiteit Antwerpen UIA
Aportación de la UE
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Dirección
Universiteitsplein 1
2610 Antwerpen
Bélgica

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Coste total
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Participantes (7)