Objective Recent advances in the physics and technology of self-organized semiconductor quantum dots (QDs) have revealed a great variety of novel physical properties and induced novel device applications, such as, for example, extremely low-threshold QD lasers. At present the QD physics and technology are best understood for III-V narrow band-gap self-organized systems, e.g. InAs/GaAs, emitting in near-infrared region. In the recent years, the interest has partly shifted to the studies of II-VI wide band-gap QD systems like CdSe/ZnSe due to such interesting properties as large exciton and biexciton binding energies and emission in the visible spectral range. However, the state-of-art epitaxial technology cannot provide the II-VI QDs of necessary dimensions and quality. Also the studies of laser physics in II-VI wide-gap QDs have been so far very scarce, due to probably very severe general problems of p-type doping of the wide-gap II-VI materials, limiting wide commercial implementation of II-VI optoelectronic devices. The main goal of the proposed research is a substantial contribution to physics and technology of CdSe QDs and exploration of their potential application for the development of a green compact QD laser device pumped by an optical or electron beam. To make a breakthrough in this field it is planned to integrate new ideas advanced molecular beam epitaxy (MBE) technology and optical spectroscopy, as well as rich background of the applicants in the relevant areas. The main Project objectives concern practically all the key issues of CdSe QD laser physics and technology, including realization of the reproducible MBE growth of variable size and density arrays of QDs with narrow size distribution, possessing high quantum efficiency up to room temperature, elucidation of major aspects of the carrier-photons dynamics in the QD active region, fabrication of advanced laser structures both in waveguide and vertical-cavity geometries, specially designed for optical and electron-beam pumping, and exploration of the CdSe QD potential in the green laser devices. To overcome the problem of poor p-type doping ability of the wide-gap selenides, the devices will take advantage of either optical pumping by GaN based lasers or LEDs or electron beam pumping using compact field emission microtip cathodes. The Project will result in elaboration of CdSe QD know-how for better understanding of the QD laser physics, including the issues of wide-gap QD gain and optical properties of the QD photonic structures, such as waveguides and microcavities. The results are expected to be highly instructive for the future development of compact UV lasers based on wide bandgap semiconductors (ZnO, GaN, diamond), which suffer from the common problems of poor doping control and ohmic contacts. Programme(s) IC-INTAS - International Association for the promotion of cooperation with scientists from the independent states of the former Soviet Union (INTAS), 1993- Topic(s) OPEN - OPEN Call Call for proposal Data not available Funding Scheme Data not available Coordinator University J. Fourier EU contribution No data Address - - Grenoble I, 38041 Grenoble cedex 9 France See on map Links Website Opens in new window Total cost No data Participants (4) Sort alphabetically Sort by EU Contribution Expand all Collapse all Academy of Science of Belarus Institute of Physics Belarus EU contribution No data Address F. Skaryna 68 220072 Minsk See on map Total cost No data Ministry of Atomic Energy State Research Center of the RF Troitsk Institute for Innovation and Fusion Research Russia EU contribution No data Address Puschkovih 1 142190 Troitsk See on map Total cost No data Russian Academy of Sciences Ioffe Physico Technical Institute Russia EU contribution No data Address Politekhnicheskaya 26 194021 St. Petersburg See on map Total cost No data University of Sheffield United Kingdom EU contribution No data Address ` S3 7RH Sheffield See on map Total cost No data
